The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

The next generation wireless network, 5G, is expected to provide ubiquitous connections to
billions of devices as well as to unlock many new services through multigigabit-per-second …

The analysis and design of an RF-input sequential load modulated balanced power
amplifier (SLMBA) are presented in this article. Unlike the existing LMBAs, in this new …

This paper presents a broadband three-stage Doherty power amplifier (DPA) using
impedance compensation for bandwidth extension. Different from the conventional design …

This article presents the theory and design methodology of broadband RF-input continuous-
mode load-modulated balanced power amplifier (CM-LMBA) by introducing the CM output …

In this article, a load-modulation enhanced wideband compact high-efficiency millimeter-
wave (mm-wave) gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) …

In this paper, a broadband continuous-mode Doherty power amplifier (CM-DPA) is realized
taking advantage of the noninfinity output impedances of peaking stage. Specifically, the …

This article presents a novel waveform engineered sequential load modulated balanced
amplifier (W-SLMBA) that uses a continuous Class-F− 1 control amplifier (CA) to manipulate …

An analytical load—pull-based design methodology for three-stage Doherty power
amplifiers (PAs) is presented and demonstrated. A compact output combiner network …

This paper presents a broadband Doherty power amplifier (DPA) design with an octave
bandwidth based on a new load network consisting of a quasi-lumped impedance …