Silica on silicon carbide
Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …
Diffusion of fission products and radiation damage in SiC
JB Malherbe - Journal of Physics D: Applied Physics, 2013 - iopscience.iop.org
A major problem with most of the present nuclear reactors is their safety in terms of the
release of radioactivity into the environment during accidents. In some of the future nuclear …
release of radioactivity into the environment during accidents. In some of the future nuclear …
Decoupling graphene from SiC (0001) via oxidation
When epitaxial graphene layers are formed on SiC (0001), the first carbon layer (known as
the “buffer layer”), while relatively easy to synthesize, does not have the desirable electrical …
the “buffer layer”), while relatively easy to synthesize, does not have the desirable electrical …
Nonreciprocal interactions induced by water in confinement
F Jiménez-Ángeles, KJ Harmon, TD Nguyen… - Physical Review …, 2020 - APS
Water mediates electrostatic interactions via the orientation of its dipoles around ions,
molecules, and interfaces. This induced water polarization consequently influences multiple …
molecules, and interfaces. This induced water polarization consequently influences multiple …
Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC
The extraordinary optical and electronic properties of graphene make it a promising
component of high-performance photodetectors. However, in typical graphene-based …
component of high-performance photodetectors. However, in typical graphene-based …
Structural and electronic properties of an abrupt interface model: Classical molecular dynamics simulations and density functional calculations
Using a density functional approach, we study structural and electronic properties of the 4 H
(0001)-SiC∕ SiO 2 interface. Through the sequential use of classical and ab initio …
(0001)-SiC∕ SiO 2 interface. Through the sequential use of classical and ab initio …
Electrochemical Pd nanodeposits on a Au nanoisland template supported on Si (100): Formation of Pd− Au alloy and interfacial electronic structures
Palladium nanoparticles have uniformly been electrodeposited on a Au nanoisland template
(NIT) supported on a Si (100) substrate, which exhibits Au-rich, Pd-rich, and/or …
(NIT) supported on a Si (100) substrate, which exhibits Au-rich, Pd-rich, and/or …
Atomic scale control and understanding of cubic silicon carbide surface reconstructions, nanostructures and nanochemistry
PG Soukiassian, HB Enriquez - Journal of Physics: Condensed …, 2004 - iopscience.iop.org
The atomic scale ordering and properties of cubic silicon carbide (β-SiC) surfaces and
nanostructures are investigated by atom-resolved room and high-temperature scanning …
nanostructures are investigated by atom-resolved room and high-temperature scanning …
Pd-on-Si catalysts prepared via galvanic displacement for the selective hydrogenation of para-chloronitrobenzene
Q Wei, YS Shi, KQ Sun, BQ Xu - Chemical Communications, 2016 - pubs.rsc.org
The direct redox reaction (galvanic displacement) between Pd2+ and substrate Si was used
to deposit Pd on Si, and the Pd–Si catalysts enabled a chemoselective hydrogenation of …
to deposit Pd on Si, and the Pd–Si catalysts enabled a chemoselective hydrogenation of …
Adsorption of atomic and molecular oxygen on 3C-SiC(111) and surfaces: A first-principles study
Density-functional theory calculations were performed to investigate the adsorption of
oxygen on 3C-SiC (111) and (1¯ 1¯ 1¯) surfaces, including single O atom, double O atoms …
oxygen on 3C-SiC (111) and (1¯ 1¯ 1¯) surfaces, including single O atom, double O atoms …