Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure
X Zhao, K Sun, S Cui, B Tang, H Hu… - Advanced Photonics …, 2023 - Wiley Online Library
Over the last decades, continuous technological advancements have been made in III‐
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
nitride light‐emitting diodes (LEDs), so that they are considered as a promising replacement …
[HTML][HTML] Recent advances in micro-pixel light emitting diode technology
Display technology has developed rapidly in recent years, with III–V system-based micro-
light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical …
light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical …
Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
We have investigated the optical properties of heterostructured InGaN platelets aiming at red
emission, intended for use as nano-scaled light-emitting diodes. The focus is on the …
emission, intended for use as nano-scaled light-emitting diodes. The focus is on the …
Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids
A Dussaigne, C Paillet, N Rochat, D Cooper… - Communications …, 2024 - nature.com
Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and
virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue …
virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue …
Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates
We demonstrated nanoplatelet In x Ga 1− x N pseudosubstrates with In content varying from
0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in …
0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in …