thin-film transistors (TFTs) for highly sensitive biosensing applications: a review
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
Palladium-based trench gate MOSFET for highly sensitive hydrogen gas sensor
A Kumar - Materials Science in Semiconductor Processing, 2020 - Elsevier
This paper presents, Palladium-based Trench Gate MOSFET (TG-MOSFET) for the detection
of hydrogen gas. The sensing mechanism occurs with the dissociation of hydrogen …
of hydrogen gas. The sensing mechanism occurs with the dissociation of hydrogen …
Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design
This work presents, performance evaluation of linearity and intermodulation distortion of
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …
novel nanoscale Gallium Nitride (GaN) Silicon-on-Insulator (SOI) N-channel FinFET (n …
Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
Comprehensive analysis of sub-20 nm black phosphorus based junctionless-recessed channel MOSFET for analog/RF applications
In this work, a comprehensive analog and RF performance of a novel Black Phosphorus-
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
Junctionless-Recessed Channel (BP-JL-RC) MOSFET has been explored at 45 nm …
[HTML][HTML] Impact on DC and analog/RF performances of SOI based GaN FinFET considering high-k gate oxide
This paper suggests an analysis of SOI-based GaN FinFET that considers high-k gate oxide
into account. The effect of using SOI substrate and a high-k dielectric layer on ON current …
into account. The effect of using SOI substrate and a high-k dielectric layer on ON current …
Simulation of perovskite solar cell employing ZnO as electron transport layer (ETL) for improved efficiency
Solar energy is quite a reliable and popular source of energy and the recent development in
this field has provided a boost for further technological development. Perovskite solar cells …
this field has provided a boost for further technological development. Perovskite solar cells …
Sub-20 nm GaAs junctionless FinFET for biosensing application
This work proposes a dielectric modulated GaAs junctionless FinFET as a biological sensor
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
in the sub-20 regime. In the proposed biosensor, HfO 2 (ᴋ= 25) is used as a base oxide …
Numerical simulation of analog metrics and parasitic capacitances of GaAs GS-GAA FinFET for ULSI switching applications
This paper explores the efficacy of Gallium Arsenide (GaAs) as a fin material on the analog
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …
metrics and parasitic capacitances of Gate Stack Gate-All-Around (GS-GAA) FinFET …