A comparison of the hard-switching performance of 650V power transistors with calorimetric verification
We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power
transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A …
transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A …
Threshold Voltage Instability After Double Pulse Test Under Different OFF-State Drain Voltages and ON-State Drain Currents in p-GaN Gate AlGaN/GaN HEMT
WC Chen, HH Lo, Y Hsin - ECS Journal of Solid State Science …, 2024 - iopscience.iop.org
This study investigated threshold voltage (V TH) instability in a Schottky p-GaN gate
AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) …
AlGaN/GaN high-electron-mobility transistor (HEMT) by using the double pulse test (DPT) …
Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design
D Timothe, P Marco - 2023 IEEE Energy Conversion …, 2023 - ieeexplore.ieee.org
This paper presents an accurate and parameterizable analytical modeling for Gallium
Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. GaN HEMTs …
Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. GaN HEMTs …
Evaluation of Monolithic AC GaN Switch in A Vienna Rectifier for UPS
Q Yu, D Klikic, V Aulagnier, E Persson… - 2024 IEEE Applied …, 2024 - ieeexplore.ieee.org
Infineon's Monolithic AC GaN switch, also known as monolithic bidirectional switches
(MBDSs), is investigated for its application in uninterruptible power supplies (UPS). This new …
(MBDSs), is investigated for its application in uninterruptible power supplies (UPS). This new …
Accelerated Power Cycling of GaN HEMTs using Switching Loss and Fast Temperature Measurement
WT Leung, M Niroomand, S Jahdi… - PCIM Europe 2024; …, 2024 - ieeexplore.ieee.org
Power cycling is typically performed by periodically self-heating a power device using a DC
current. This paper demonstrates a technique to boost the heating power to shorten the …
current. This paper demonstrates a technique to boost the heating power to shorten the …
A Physical Approach to High-Bandwidth, Low Insertion Impedance Current Measurement for High-Frequency Switching Wide-Bandgap Devices
S Ledinger - 2024 - repositum.tuwien.at
Since its invention by Julius Edgar Lilienfeld in 1926, the field-effect transistor FET led the
way to the invention of the metal-oxide-semiconductor field-effect transistor (MOSFET) in the …
way to the invention of the metal-oxide-semiconductor field-effect transistor (MOSFET) in the …