This review outlines developments in the growth of crystalline oxides on the ubiquitous
silicon semiconductor platform. The overall goal of this endeavor is the integration of …

The molecular beam epitaxy of SrTiO 3 (STO) layers on Si (001) is studied, focusing on the
early stages of the growth and on the strain relaxation process. Evidence is given that even …

The epitaxial relationships of lattices and crystalline qualities of LSMO/ZnO/sapphire double-
hetero systems were thoroughly analyzed using X-ray diffraction techniques with a modern …

Oxides form a class of material, which covers almost all the spectra of functionalities:
dielectric, semiconductor, metallic, superconductor, optically nonlinear, piezoelectric …

Due to the remarkable possibilities of epitaxially growing strontium titanate (SrTiO3 or STO)
on silicon, this oxide is widely used as a buffer layer for integrating other perovskite oxides …

An equilibrium model describing accommodation at epitaxial interfaces of highly dissimilar
material systems is presented. For large lattice mismatches and large interface energies, the …

Size-selected FeRh clusters have been deposited at low energy and under ultra-high
vacuum conditions, on a BaTiO 3 epitaxial thin film. Using x-ray diffraction in grazing …

Epitaxial SrTi O 3 (STO)/Si templates open a unique opportunity for the integration of
ferroelectric oxides, such as BaTi O 3 on silicon and for the realization of new devices …

We summarise in this paper the work of two groups focusing on the synthesis and
characterisation of functional oxide for nanoelectronic applications. In the first section, we …

We study the role of a Ti surface treatment applied to the As-terminated GaAs (001)
substrate surface prior to SrTiO 3 (STO) epitaxial growth by comparing STO/GaAs samples …