High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

This paper presents an accurate analytical model to calculate the power loss of a high
voltage Gallium Nitride high electron mobility transistor (GaN HEMT) in cascode …

Realistic estimation of power MOSFET switching losses is critical for predicting the maximum
junction temperature and efficiency of power electronics circuits. The purpose of this paper is …

This paper proposes a novel synchronous rectifier (SR) driving scheme for resonant
converters. It is very suitable for high-frequency, high-efficiency, and high-power-density dc …

The piecewise linear model has traditionally been used to calculate switching losses in
switching mode power supplies due to its simplicity and good performance. However, the …

In this paper, a review of switching loss mechanisms for synchronous buck voltage
regulators (VRs) is presented. Following the review, a new simple and accurate analytical …

This paper deals with a new resonant gate-drive circuit for power MOSFETs. The proposed
gate-drive circuit is characterized by a resonant inductor connected in series with the gate …

This article presents a novel current-source gate driver for Silicon Carbide (SiC) metal oxide
semiconductor field-effect transistors (mosfets) with adaptive functionalities. The proposed …

This paper deals with a resonant gate-drive circuit for fast-switching and high-voltage power
semiconductor devices, which is equipped with optical fibers for both gate control signal and …

This paper presents a high-performance resonant gate-drive circuit for MOSFETs and IGBTs,
which has high efficiency, fast switching capability, high robustness, and simple topology …