Two-dimensional (2D) materials with unique band structures have shown great potential for
modern electronics and optoelectronics. The junction composed of metals and 2D van der …

With distinctive advantages spanning excellent flexibility, rich physical properties, strong
electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered …

We report a waveguide-integrated MoS2 photodetector operating at the telecom band,
which is enabled by hot-electron-assisted photodetection. By integrating few-layer MoS2 on …

In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband
convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers …

We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …

Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential
in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub …

Over the past decade, 2D elemental semiconductors have emerged as an ever-increasingly
important group in the 2D material family due to their simple crystal structures and …

Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) have attracted extensive
interest as a competitive platform for implementing future-generation functional electronics …

Internal photoemission is a prominent branch of the photoelectric effect and has emerged as
a viable method for detecting photons with energies below the semiconductor bandgap. This …

Hot electron photodetection provides a powerful platform for photosensing beyond the
bandgap of a semiconductor. High‐performing hot electron photodetection has been …