Theory of piezotronics and piezo-phototronics

Y Zhang, Y Leng, M Willatzen, B Huang - Mrs Bulletin, 2018 - cambridge.org
Piezotronic and piezo-phototronic devices exhibit high performance and have potential
applications especially in next-generation self-powered, flexible electronics and wearable …

Impact of shell growth on recombination dynamics and exciton–phonon interaction in CdSe–CdS core–shell nanoplatelets

AW Achtstein, O Marquardt, R Scott, M Ibrahim… - ACS …, 2018 - ACS Publications
We investigate the impact of shell growth on the carrier dynamics and exciton–phonon
coupling in CdSe–CdS core–shell nanoplatelets with varying shell thickness. We observe …

Simulating the electronic properties of semiconductor nanostructures using multiband k· p models

O Marquardt - Computational Materials Science, 2021 - Elsevier
The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

Locking-Free and Gradient-Robust H (\, div\,) H (div)-Conforming HDG Methods for Linear Elasticity

G Fu, C Lehrenfeld, A Linke, T Streckenbach - Journal of Scientific …, 2021 - Springer
Robust discretization methods for (nearly-incompressible) linear elasticity are free of volume-
locking and gradient-robust. While volume-locking is a well-known problem that can be dealt …

Excitonic Aharonov–Bohm oscillations in core–shell nanowires

P Corfdir, O Marquardt, RB Lewis, C Sinito… - Advanced …, 2019 - Wiley Online Library
Phase coherence in nanostructures is at the heart of a wide range of quantum effects such
as Josephson oscillations between exciton–polariton condensates in microcavities …

Modeling the electronic properties of GaAs polytype nanostructures: Impact of strain on the conduction band character

O Marquardt, M Ramsteiner, P Corfdir, L Geelhaar… - Physical Review B, 2017 - APS
We study the electronic properties of GaAs nanowires composed of both the zinc-blende
and wurtzite modifications using a ten-band k· p model. In the wurtzite phase, two …

Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells

AA Roble, SK Patra, F Massabuau, M Frentrup… - Scientific Reports, 2019 - nature.com
We report on a combined theoretical and experimental study of the impact of alloy
fluctuations and Coulomb effects on the electronic and optical properties of c-plane …

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

S Kanta Patra, T Wang, TJ Puchtler, T Zhu… - … status solidi (b), 2017 - Wiley Online Library
We present here a combined experimental and theoretical analysis of the radiative
recombination lifetime in a‐plane (11 0) InGaN/GaN quantum dots. The structures have …

[HTML][HTML] Multiscale simulations of the electronic structure of III-nitride quantum wells with varied indium content: Connecting atomistic and continuum-based models

D Chaudhuri, M O'Donovan, T Streckenbach… - Journal of Applied …, 2021 - pubs.aip.org
Carrier localization effects in III-N heterostructures are often studied in the frame of modified
continuum-based models utilizing a single-band effective mass approximation. However …

Insight into the impact of atomic-and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding …

F Tang, T Zhu, WY Fu, F Oehler, S Zhang… - Journal of Applied …, 2019 - pubs.aip.org
We investigate the atomic scale structure of m-plane InGaN quantum wells grown on bulk m-
plane GaN templates and reveal that as the indium content increases there is an increased …