The present invention is directed to display technologies. More specifically, various
embodiments of the present invention provide projection display systems where one or more …

US8847249B2 - Solid-state optical device having enhanced indium content in active regions -
Google Patents US8847249B2 - Solid-state optical device having enhanced indium content in …

7.923, 741 B1 4, 2011 Zhai et all-4- 2009, 0081857 A1 3f2009 Hanser et al. 7,939,354 B2
5/2011 Kyono et al. 7968.864 B2 6, 2011 Akita et al. 2009/0081867 A1 3, 2009 Taguchi et …

7,009,199 B2 3/2006 Hall 2008/00879 19 A1 4/2008 Tysoe et al. 2.933, 858 B2 4.2996 Chai
et al. 2008/00928.12 A1 4/2008 McDiarmid et al. 7053, 413 B2 5 2006 PEvelyn et al …

An optical device includes a gallium nitride substrate member having an m-plane nonpolar
crystalline surface region characterized by an orientation of about− 2 degrees to about 2 …

US9543738B2 - Low voltage laser diodes on {20-21} gallium and nitrogen containing
substrates - Google Patents US9543738B2 - Low voltage laser diodes on {20-21} gallium and …

An optical device capable of emitting light having a wavelength ranging from about 490 to
about 580 nanometers has a gallium nitride substrate with a semipolar crystalline surface …

Method and devices for emitting electromagnetic radiation at high power using nonpolar or
semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and …

6.451157 B1 9/2002 Hubacek 2006/0086.319 A1 4/2006 Kasai et al. 6,635,904 B2 10/2003
Goetzetal. 2006/O126688 A1 6/2006 Kneissl 6,680.959 B2 1/2004 Tanabeet al. 2006 …

(57) ABSTRACT A method and device for emitting electromagnetic radiation at high power
using nonpolar or semipolar gallium contain ing substrates such as GaN. AlN, InN, InCaN …