SiC and GaN devices–wide bandgap is not all the same
N Kaminski, O Hilt - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
SiC power devices—Present status, applications and future perspective
Silicon carbide (SiC) semiconductor devices for high power applications are now
commercially available as discrete devices. Recently Schottky diodes are offered by both …
commercially available as discrete devices. Recently Schottky diodes are offered by both …
A survey of wide bandgap power semiconductor devices
J Millan, P Godignon, X Perpiñà… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Wide bandgap semiconductors show superior material properties enabling potential power
device operation at higher temperatures, voltages, and switching speeds than current Si …
device operation at higher temperatures, voltages, and switching speeds than current Si …
Vertical power pn diodes based on bulk GaN
IC Kizilyalli, AP Edwards, O Aktas… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
There is a great interest in wide-bandgap semiconductor devices and most recently in
monolithic GaN structures for power electronics applications. In this paper, vertical pn diodes …
monolithic GaN structures for power electronics applications. In this paper, vertical pn diodes …
1.5-kV and 2.2-m -cm Vertical GaN Transistors on Bulk-GaN Substrates
H Nie, Q Diduck, B Alvarez, AP Edwards… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, vertical GaN transistors fabricated on bulk GaN substrates are discussed. A
threshold voltage of 0.5 V and saturation current> 2.3 A are demonstrated. The measured …
threshold voltage of 0.5 V and saturation current> 2.3 A are demonstrated. The measured …
GaN power transistors on Si substrates for switching applications
N Ikeda, Y Niiyama, H Kambayashi… - Proceedings of the …, 2010 - ieeexplore.ieee.org
In this paper, GaN power transistors on Si substrates for power switching application are
reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important …
reported. GaN heterojunction field-effect transistor (HFET) structure on Si is an important …
Lateral 1.8 kV -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
-Lateral β-Ga 2 O 3 MOSFET for power switching applications with a 1.8 kV breakdown
voltage and a record power figure of merit of 155 MW/cm 2 are demonstrated. Sub-μm gate …
voltage and a record power figure of merit of 155 MW/cm 2 are demonstrated. Sub-μm gate …
A current-transient methodology for trap analysis for GaN high electron mobility transistors
J Joh, JA Del Alamo - IEEE Transactions on Electron Devices, 2010 - ieeexplore.ieee.org
Trapping is one of the most deleterious effects that limit performance and reliability in GaN
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …
HEMTs. In this paper, we present a methodology to study trapping characteristics in GaN …
High voltage vertical GaN pn diodes with avalanche capability
IC Kizilyalli, AP Edwards, H Nie… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
In this paper, vertical pn diodes fabricated on pseudobulk gallium nitride (GaN) substrates
are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a …
are discussed. The measured devices demonstrate breakdown voltages of 2600 V with a …
AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low
E Bahat-Treidel, F Brunner, O Hilt, E Cho… - … on Electron Devices, 2010 - ieeexplore.ieee.org
A systematic study of GaN-based heterostructure field-effect transistors with an insulating
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …
carbon-doped GaN back barrier for high-voltage operation is presented. The impact of …