The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …

Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

The scalability of DRAM faces challenges from increasing power consumption and the
difficulty of building high aspect ratio capacitors. Consequently, emerging memory …

In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

In this article, the development history and the technical hurdles of phase-change memory
(PCM) are reviewed and recent progress and future directions are discussed. Prospects of …

Passive crossbar resistive random access memory (RRAM) arrays require select devices
with nonlinear IV characteristics to address the sneak-path problem. Here, we present a …

The goal of neuromorphic engineering is to build electronic systems that mimic the ability of
the brain to perform fuzzy, fault-tolerant, and stochastic computation, without sacrificing …

Notice of Violation of IEEE Publication Principles" Overview of Selector Devices for 3-D
Stackable Cross Point RRAM Arrays," by Rakesh Aluguri and Tseung-Yuen Tseng in IEEE …