Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Memory materials and devices: From concept to application

Z Zhang, Z Wang, T Shi, C Bi, F Rao, Y Cai, Q Liu… - InfoMat, 2020 - Wiley Online Library
Memory cells have always been an important element of information technology. With
emerging technologies like big data and cloud computing, the scale and complexity of data …

Memristive devices for computing

JJ Yang, DB Strukov, DR Stewart - Nature nanotechnology, 2013 - nature.com
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …

Recent progress in phase-change memory technology

GW Burr, MJ Brightsky, A Sebastian… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
We survey progress in the PCM field over the past five years, ranging from large-scale PCM
demonstrations to materials improvements for high–temperature retention and faster …

Overcoming the challenges of crossbar resistive memory architectures

C Xu, D Niu, N Muralimanohar… - 2015 IEEE 21st …, 2015 - ieeexplore.ieee.org
The scalability of DRAM faces challenges from increasing power consumption and the
difficulty of building high aspect ratio capacitors. Consequently, emerging memory …

Nanoscale resistive switching memory devices: a review

S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Evolution of phase-change memory for the storage-class memory and beyond

T Kim, S Lee - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, the development history and the technical hurdles of phase-change memory
(PCM) are reviewed and recent progress and future directions are discussed. Prospects of …

Crossbar RRAM arrays: Selector device requirements during read operation

J Zhou, KH Kim, W Lu - IEEE Transactions on Electron Devices, 2014 - ieeexplore.ieee.org
Passive crossbar resistive random access memory (RRAM) arrays require select devices
with nonlinear IV characteristics to address the sneak-path problem. Here, we present a …

Specifications of nanoscale devices and circuits for neuromorphic computational systems

B Rajendran, Y Liu, J Seo… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The goal of neuromorphic engineering is to build electronic systems that mimic the ability of
the brain to perform fuzzy, fault-tolerant, and stochastic computation, without sacrificing …

Notice of violation of IEEE publication principles: overview of selector devices for 3-D stackable cross point RRAM arrays

R Aluguri, TY Tseng - IEEE Journal of the Electron Devices …, 2016 - ieeexplore.ieee.org
Notice of Violation of IEEE Publication Principles" Overview of Selector Devices for 3-D
Stackable Cross Point RRAM Arrays," by Rakesh Aluguri and Tseung-Yuen Tseng in IEEE …