Infrared colloidal quantum dot image sensors
Quantum dots (QDs) have been explored for many photonic applications, both as emitters
and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent …
and absorbers. Thanks to the bandgap tunability and ease of processing, they are prominent …
Breaking the Size Limitation of Directly‐Synthesized PbS Quantum Dot Inks Toward Efficient Short‐wavelength Infrared Optoelectronic Applications
Y Liu, Y Gao, Q Yang, G Xu, X Zhou… - Angewandte Chemie …, 2023 - Wiley Online Library
PbS quantum dots (QDs) are promising building blocks for solution‐processed short‐
wavelength infrared (SWIR) devices. The recently developed direct synthesis of semi …
wavelength infrared (SWIR) devices. The recently developed direct synthesis of semi …
Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region
Y Miao, H Lin, B Li, T Dong, C He, J Du, X Zhao, Z Zhou… - Nanomaterials, 2023 - mdpi.com
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
Planar multilayered 2D GeAs Schottky photodiode for high-performance visible–near-infrared photodetection
Novel group IV-V 2D semiconductors (eg, GeAs and SiAs) have arisen as an attractive
candidate for broad-band photodetection and optoelectronic applications. This 2D family …
candidate for broad-band photodetection and optoelectronic applications. This 2D family …
Passivation of III–V surfaces with crystalline oxidation
P Laukkanen, MPJ Punkkinen, M Kuzmin… - Applied Physics …, 2021 - pubs.aip.org
Control of interfacial physicochemical properties associated with device materials to
minimize the impact of point defects on device performance has been a dominant theme in …
minimize the impact of point defects on device performance has been a dominant theme in …
Barrier engineering for HgCdTe unipolar detectors on alternative substrates
Delta-doped layers together with compositionally grading have been utilized to get nBn
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …
configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave …
A high-performance broadband phototransistor array of a PdSe 2/SOI Schottky junction
Y Chen, Q Zhu, J Sun, Y Sun, N Hanagata, M Xu - Nanoscale, 2024 - pubs.rsc.org
There is great interest in the incorporation of novel two-dimensional materials into Si-based
technologies to realize multifunctional optoelectronic devices via heterogeneous integration …
technologies to realize multifunctional optoelectronic devices via heterogeneous integration …
InGaAs nanomembrane/Si van der Waals heterojunction photodiodes with broadband and high photoresponsivity
Development of broadband photodetectors is of great importance for applications in high-
capacity optical communication, night vision, and biomedical imaging systems. While …
capacity optical communication, night vision, and biomedical imaging systems. While …
High performance near-infrared MoTe2/Ge heterojunction photodetector fabricated by direct growth of Ge flake on MoTe2 film substrate
W Lei, X Wen, G Cao, L Yang, P Zhang… - Applied Physics …, 2022 - pubs.aip.org
We demonstrated a feasible strategy to fabricate MoTe 2/Ge heterojunction by direct growth
of Ge flake on a MoTe 2 film substrate with a two-step chemical vapor deposition method. A …
of Ge flake on a MoTe 2 film substrate with a two-step chemical vapor deposition method. A …
Lasing characteristics and reliability of 1550 nm laser diodes monolithically grown on silicon
Room‐temperature continuous wave (RT‐CW) electrically pumped 1550 nm indium
phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide …
phosphide (InP)‐based laser diodes are realized on complementary metal‐oxide …