In this paper initially we present two CNTFET models: the first, already proposed by us and
the second the Stanford model, recalling our method to match the output characteristics and …

In this paper we present a comparison of temperature dependence of IV characteristics in
Carbon Nanotube Field Effect Transistor (CNTFET) models proposed in the literature in …

In this paper, a novel junctionless carbon nanotube field-effect transistor (JL-CNTFET)
endowed with a split coaxial gate (SCG) is proposed through a rigorous self-consistent …

In this paper we simulate the effects of temperature in CNTFET-based design of analog
circuits, enhancing a semi-empirical model of CNTFET, already proposed by us, in which the …

In this paper the new methods in improving the performance of carbon nanotube filed effect
transistors (CNTFETs) are reviewed and analyzed for the first time. Nano-meter dimensions …

In this paper, we study the effects of ambient temperature variations on the high frequency
behavior of tunneling carbon nanotube field effect transistors (T-CNTFETs). Device …

In this paper we initially present two CNTFET models: the first is already proposed by us and
the second is the Stanford model, proposing a method to match the output characteristics …

In this paper, a GaAs SOI (Silicon on Insulator) FinFET is proposed. Si FinFET is suitable for
high speed applications, but GaAs FinFETs provides better performance than Si FinFET. The …

In this paper, we analyze the effects of temperature dependence of energy bandgap on I− V
characteristics in some carbon nanotube field effect transistors (CNTFETs) models proposed …

In this paper a DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is
proposed. In particular we improve the semi-empirical model, already proposed by us …