Effects of oxygen plasma treatment on Cd1− xZnxTe material and devices
A Brovko, O Amzallag, A Adelberg, L Chernyak… - Nuclear Instruments and …, 2021 - Elsevier
Surface passivation in detectors is designed to improve the performance and stabilize the
characteristics over time and ambient. In Cd 1− x Zn x Te radiation detectors, oxidation by …
characteristics over time and ambient. In Cd 1− x Zn x Te radiation detectors, oxidation by …
Assessment of deep levels with selenium concentration in Cd1–xZnxTe1–ySey room temperature detector materials
Incorporation of Se into Cd 1− x Zn x Te (CZT) to form the quaternary compound
semiconductor Cd 1− x Zn x Te 1–y Se y (CZTS) has proven to be an effective solution for …
semiconductor Cd 1− x Zn x Te 1–y Se y (CZTS) has proven to be an effective solution for …
Enhanced photoelectrochemistry properties of CdZnTeSe thin films
M Cao, Z Xu, W He, Z Zhang, Z Wang, Q Hu… - Applied Surface …, 2025 - Elsevier
CdZnTe (CZT), as an optimum absorption layer, has many attractive characteristics for
photoelectrochemical (PEC) water splitting, such as tunable band gaps (1.45–2.26 eV) and …
photoelectrochemical (PEC) water splitting, such as tunable band gaps (1.45–2.26 eV) and …
Al doping and defect regulation of sputtered CdZnTe films based on Al–AlN transition layers
P Sun, Y Shen, Y Kuang, D Wen, J Huang, F Gu, J Min… - Vacuum, 2023 - Elsevier
CdZnTe films with less defects and high quality were fabricated on aluminum-rich AlN (Al–
AlN) transition layers by RF magnetron sputtering technique. The Al doping and regulation …
AlN) transition layers by RF magnetron sputtering technique. The Al doping and regulation …
Growth and characterization of large-size CdMgTe single crystals doped with different in amounts
P Yu, S Zhao, P Gao, H Li, G Sun, W Jie - Vacuum, 2024 - Elsevier
Cadmium magnesium telluride (CdMgTe) is a very perspective material for room
temperature radiation detectors. In this paper, two large-size Cd 0.95 Mg 0.05 Te ingots …
temperature radiation detectors. In this paper, two large-size Cd 0.95 Mg 0.05 Te ingots …
Deep-Level Defects in CdZnTe and CdMnTe Detectors Identified by Photo-Induced Current Transient Spectroscopy (PICTS) and Thermally Simulated Current (TSC) …
PV Raja - 2020 - hal.science
The deep-level defects in the Cd1-xZnxTe (CZT) and Cd1-xMnxTe (CMT) detectors are
characterized by photo-induced current transient spectroscopy (PICTS), thermoelectric …
characterized by photo-induced current transient spectroscopy (PICTS), thermoelectric …