Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors
Indium oxide (In2O3) is a transparent wide-bandgap semiconductor suitable for use in the
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …
back-end-of-line-compatible channel layers of heterogeneous monolithic three-dimensional …
Reliability issues of amorphous oxide semiconductor-based thin film transistors
Y Shen, M Zhang, S He, L Bian, J Liu, Z Chen… - Journal of Materials …, 2024 - pubs.rsc.org
Amorphous oxide semiconductors (AOSs) are non-crystalline compounds composed of
metal elements and oxygen elements, possessing distinctive electrical properties. Even in …
metal elements and oxygen elements, possessing distinctive electrical properties. Even in …
Oxide and 2D TMD semiconductors for 3D DRAM cell transistors
As the scaling of conventional dynamic random-access memory (DRAM) has reached its
limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However …
limits, 3D DRAM has been proposed as a next-generation DRAM cell architecture. However …
Field Induced Off‐State Instability in InGaZnO Thin‐Film Transistor and its Impact on Synaptic Circuits
Charge storage synaptic circuits employing InGaZnO thin‐film transistors (IGZO TFTs) and
capacitors are a promising candidate for on‐chip trainable neural network hardware …
capacitors are a promising candidate for on‐chip trainable neural network hardware …
Fully atomic layer deposition induced InAlO thin film transistors
X Ding, J Yang, J Li, J Zhang - Vacuum, 2024 - Elsevier
The atomic layer deposition (ALD) technique has been extensively utilized for depositing
metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs) …
metal oxide (MO) thin films, particularly as gate insulators in thin film transistors (TFTs) …
Improved Specific Contact Resistivity in Amorphous IGZO Transistors using an ALD-Derived Al-Doped ZnO Interlayer
This study shows the effects of an ultrathin Al2O3-doped ZnO (AZO) interlayer inserted
between the channel layer and source/drain (S/D) electrodes on the electrical contact …
between the channel layer and source/drain (S/D) electrodes on the electrical contact …
Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress
Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are
increasingly becoming popular because of their potential in futuristic applications, including …
increasingly becoming popular because of their potential in futuristic applications, including …
Advanced 2T0C DRAM Technologies for Processing-in-Memory—Part I: Vertical Transistor on Gate (VTG) DRAM Cell Structure
SH Kong, W Shim - IEEE Transactions on Electron Devices, 2024 - ieeexplore.ieee.org
Two-transistor-zero-capacitor (2T0C) DRAM cell has been proposed and extensively
investigated as a memory device for processing-in-memory (PIM) applications. In this two …
investigated as a memory device for processing-in-memory (PIM) applications. In this two …
Investigation of width-to-length ratio on the performance of ZnO transistors and inverters
J Xie, Q Wang, D Han, X Zhang - Japanese Journal of Applied …, 2024 - iopscience.iop.org
Oxide transistors have attracted considerable attention in the field of integrated circuits. In
this work, ZnO transistors were fabricated using an atomic layer deposition process, with …
this work, ZnO transistors were fabricated using an atomic layer deposition process, with …
Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress
Recently, a-IGZO has advanced toward the next-generation electronics system because of
its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of …
its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of …