[HTML][HTML] Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si (100)
In this work, we report on self-limiting growth of InN thin films at substrate temperatures as
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …
Effects of BN layer on photoelectric properties and stability of flexible Al/Cu/ZnO multilayer thin film
B Li, G Yang, L Huang, T Wang, N Ren - Ceramics International, 2020 - Elsevier
This study focused on utilizing a boron nitride (BN) layer to improve the photoelectric
property stability of the flexible Al/Cu/ZnO multilayer thin film, which was prepared on a …
property stability of the flexible Al/Cu/ZnO multilayer thin film, which was prepared on a …
Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer
This work reports the growth of c-plane textured InN thin films on Cu-ZnO buffered silicon, c-
sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the …
sapphire, bulk GaN and quartz substrates. A Cu-ZnO buffer layer was deposited on all the …
Effect of substrate temperature on structural and optical properties of InN epilayer grown on GaN template
WC Chen, SY Kuo, FI Lai, WT Lin, CN Hsiao - Thin Solid Films, 2013 - Elsevier
The correlation between structural and optical properties of indium nitride epilayer grown on
gallium nitride/c-sapphire by radio frequency metal-organic molecular beam epitaxy is …
gallium nitride/c-sapphire by radio frequency metal-organic molecular beam epitaxy is …
Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE
SY Kuo, FI Lai, WC Chen, WT Lin, CN Hsiao… - Diamond and related …, 2011 - Elsevier
In this paper, we report the studies on the hetero-epitaxial growth of wurtzite indium nitride
(InN) thin films on oxide buffer layer by RF metal-organic molecular beam epitaxy (RF …
(InN) thin films on oxide buffer layer by RF metal-organic molecular beam epitaxy (RF …
Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD
AB Zhi, FW Qin, D Zhang, J Bian, B Yu, ZF Zhou… - Vacuum, 2012 - Elsevier
High quality InN films are deposited with an interlayer of high c-orientation (002) AZO
(Aluminium-doped Zinc Oxide; ZnO: Al) films on glass substrates by electron cyclotron …
(Aluminium-doped Zinc Oxide; ZnO: Al) films on glass substrates by electron cyclotron …
Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
WC Chen, SY Kuo, WL Wang, JS Tian, WT Lin… - Nanoscale research …, 2012 - Springer
This paper reports on high-quality InN materials prepared on a GaN template using radio-
frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro …
frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro …
Annealing studies on InN thin films grown by modified activated reactive evaporation
KP Biju, MK Jain - Journal of crystal growth, 2009 - Elsevier
We describe the effect of annealing in air and in vacuum on structural, electrical and optical
properties of indium nitride (InN) thin films. The films were grown by modified activated …
properties of indium nitride (InN) thin films. The films were grown by modified activated …
Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE
FI Lai, SY Kuo, WC Chen, WT Lin, WL Wang… - Journal of crystal …, 2011 - Elsevier
In this paper, high-quality wurtzite indium nitride was epi-grown on sapphire substrates by
plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and …
plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and …
使用射頻電漿輔助化學束磊晶成長氮化銦磊晶材料於表面氮化處理矽(111) 基板之研究
S Chen - 2019 - search.proquest.com
本研究利用射頻電漿輔助化學束磊晶系統於矽(111) 基板上製備氮化矽緩衝層,
針對製備緩衝層之電漿氮氣流量比, 氮化時間進行研究, 探討氮化銦於不同條件之緩衝層生長其 …
針對製備緩衝層之電漿氮氣流量比, 氮化時間進行研究, 探討氮化銦於不同條件之緩衝層生長其 …