This review discusses recent progress in the development of hard X-ray microscopy
techniques for materials characterization at the nanoscale. Although the utility of traditionally …

Scanning transmission electron microscopy (STEM) is widely used for imaging, diffraction,
and spectroscopy of materials down to atomic resolution. Recent advances in detector …

In the past decade several versions of micro-scale residual stress analysis techniques have
been developed based on Focused Ion Beam (FIB) milling at sample surface followed by …

In this paper, we demonstrate that the shift between similar features in two electron
backscatter diffraction (EBSD) patterns can be measured using cross-correlation based …

We report on the development of a nanometer scale strain mapping technique by means of
scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with …

Strained silicon is now an integral feature of the latest generation of transistors and
electronic devices,, because of the associated enhancement in carrier mobility,. Strain is …

Nanoscale strain mapping by four-dimensional scanning transmission electron microscopy
(4D-STEM) relies on determining the precise locations of Bragg-scattered electrons in a …

The last few years have seen a great deal of progress in the development of transmission
electron microscopy based techniques for strain mapping. New techniques have appeared …

Convergent beam electron diffraction (CBED), nano-beam electron diffraction (NBED or
NBD), high resolution imaging (HRTEM and HRSTEM) and dark field electron holography …

Aberration-corrected high-resolution transmission electron microscopy (HRTEM) is used to
measure strain in a strained-silicon metal-oxide-semiconductor field-effect transistor. Strain …