Evidence of transport degradation in 22 nm FD-SOI charge trapping transistors for neural network applications
This article reports on the characterization and analysis of 22 nm FD-SOI CMOS technology-
based charge trap transistors (CTT) and their application in neural networks. The working …
based charge trap transistors (CTT) and their application in neural networks. The working …
Random Telegraph Noise and Radiation Response of 80 nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide
Random telegraph noise (RTN) measurements are performed on as-processed,
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
programmed, erased, and irradiated 80 nm vertical charge-trapping nand memory …
An Offset-Cancellation Technique Using Charge-Trap Transistors and Asynchronous Programming Scheme
Y Lin, A Jiang, J Lv, Y Du, L Du - IEEE Transactions on Circuits …, 2024 - ieeexplore.ieee.org
In this article, a novel offset-cancellation (OC) technique is proposed, utilizing differential
pair Charge-Trap Transistors (CTTs) to cancel offset voltage (VOS). The threshold voltage …
pair Charge-Trap Transistors (CTTs) to cancel offset voltage (VOS). The threshold voltage …
Total-Ionizing-Dose Effects, Low-Frequency Noise, and Random Telegraph Noise of MOSFETs with Advanced Architectures
M Gorchichko - 2021 - ir.vanderbilt.edu
In this dissertation, the basic mechanisms of total-ionizing-dose (TID) responses of Gate-All-
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …
Around (GAA) FETs and Charge-Trap Transistors (CTT) with FinFET architecture are …