With the emerging trend of big data and internet of things, silicon (Si) photonics technology
has been developed and applied for high‐bandwidth data transmission. Contributed by the …

Modulation is a cornerstone of optical communication, and as such, governs the overall
speed of data transmission. Currently, the two main strategies for modulating light are direct …

Al/Er-codoped ZnO films on epitaxial Si substrates are used to fabricate npn heterojunction
devices. By controlling the hole concentration in the p-layer of epitaxial Si substrates, the …

Silicon based erbium doped Ga 2 O 3 films and devices are fabricated. It is found that the
intensity of Er 3+ ions emission can be enhanced by optimizing the content of sensitizer as …

54 μm photoluminescence and electroluminescence are achieved from erbium doped Ga 2
O 3 films on silicon substrates and corresponding devices fabricated by sputtering …

An Erbium doped light emitting device characterized with long-term reliability has been
realized. The devices are based on npn heterojunction structure which are composed of-Si …

Erbium doped ZnGa 2 O 4 spinel nanofilms are fabricated by atomic layer deposition on Si
substrates, the electroluminescence (EL) devices based on which present intense∼ 1.53 …

We report on multicolor and near-infrared electroluminescence (EL) from the devices using
rare-earth doped TiO 2 (TiO 2: RE) films as light-emitting layers, which are ascribed to the …

We experimentally quantify the contribution of magnetic dipole (MD) transitions to the near-
infrared light emission from trivalent erbium-doped yttrium oxide (Er 3+: Y 2 O 3). Using …

A metal–oxide–semiconductor (MOS) electroluminescence device based on erbium silicate
nanocrystals and silicon nanocrystals co-embedded in silicon oxide films fabricated by …