The role of power device technology in the electric vehicle powertrain

E Robles, A Matallana, I Aretxabaleta… - … Journal of Energy …, 2022 - Wiley Online Library
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices

B Zhang, S Wang - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …

Evaluation of Aging's Effect on Temperature-Sensitive Electrical Parameters in SiC mosfets

F Yang, E Ugur, B Akin - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
The temperature-sensitive electrical parameters (TSEPs) have been used in silicon carbide
(SiC) MOSFETS junction temperature measurement for over-temperature protection and …

Effect of asymmetric layout and unequal junction temperature on current sharing of paralleled SiC MOSFETs with kelvin-source connection

C Zhao, L Wang, F Zhang - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) mosfets is a popular solution for high-capacity
applications. In order to improve the switching speed of paralleled SiC mosfets, Kelvin …

Electrical performance advancement in SiC power module package design with kelvin drain connection and low parasitic inductance

F Yang, Z Wang, Z Liang, F Wang - IEEE Journal of Emerging …, 2018 - ieeexplore.ieee.org
Silicon carbide (SiC) power modules are promising for high-power applications because of
the high breakdown voltage, high operation temperature, low ON-resistance, and fast …

Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions

H Li, S Zhao, X Wang, L Ding… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

Influence of paralleling dies and paralleling half-bridges on transient current distribution in multichip power modules

H Li, W Zhou, X Wang, S Munk-Nielsen… - … on Power Electronics, 2018 - ieeexplore.ieee.org
This letter addresses the transient current distribution in the multichip half-bridge power
modules, where two types of paralleling connections with different current commutation …

Design and evaluation of laminated busbar for three-level T-type NPC power electronics building block with enhanced dynamic current sharing

Z Yuan, H Peng, A Deshpande… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …

Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation

F Gonzalez-Hernando, J San-Sebastian… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, a condition monitoring system for the degradation assessment of power
semiconductor modules under switching conditions is presented. The proposed monitoring …

Fast and flexible, arbitrary waveform, 20-kV, solid-state, impedance-matched Marx generator

JJ van Oorschot, T Huiskamp - IEEE Transactions on Plasma …, 2023 - ieeexplore.ieee.org
We developed a new pulsed power supply to study the influence of the high-voltage (HV)
pulse shape on the generation of plasma-activated water (PAW). This article shows the …