Memristor‐Based Neuromorphic Chips
X Duan, Z Cao, K Gao, W Yan, S Sun… - Advanced …, 2024 - Wiley Online Library
In the era of information, characterized by an exponential growth in data volume and an
escalating level of data abstraction, there has been a substantial focus on brain‐like chips …
escalating level of data abstraction, there has been a substantial focus on brain‐like chips …
Flexible memristor-based nanoelectronic devices for wearable applications: a review
Z Rao, X Wang, S Mao, J Qin, Y Yang… - ACS Applied Nano …, 2023 - ACS Publications
In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …
devices, wearable electronic products can effectively improve work efficiency and quality of …
Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level
A Fe 2 O 3 film homojunction was orderly prepared by magnetron sputtering and a
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …
Self‐Rolling‐Up Enabled Ultrahigh‐Density Information Storage in Freestanding Single‐Crystalline Ferroic Oxide Films
Y Guo, B Peng, R Qiu, G Dong, Y Yao… - Advanced Functional …, 2023 - Wiley Online Library
Ferroelectric memory is one of the most attractive emerging nonvolatile memory.
Conventional methods to increase storage density in ferroelectrics include reducing the …
Conventional methods to increase storage density in ferroelectrics include reducing the …
Influence of nano-clay platelet concentration on achieving a transition from write once read many (WORM) to complementary resistive switching (CRS) behaviour in …
SK Bhattacharjee, C Debnath, SA Hussain… - Journal of Materials …, 2024 - Springer
Resistive memory devices are a promising technology, but they face challenges like sneak
paths in crossbar arrays. Complementary resistive switching (CRS) devices offer a …
paths in crossbar arrays. Complementary resistive switching (CRS) devices offer a …
A memristive-photoconductive transduction methodology for accurately nondestructive memory readout
Z Zhou, Y Wu, K Pan, D Zhu, Z Li, S Yan… - Light: Science & …, 2024 - nature.com
Crossbar resistive memory architectures enable high-capacity storage and neuromorphic
computing, accurate retrieval of the stored information is a prerequisite during read …
computing, accurate retrieval of the stored information is a prerequisite during read …
Epitaxial Growth of Two-Dimensional MoO2–MoSe2 Metal–Semiconductor Heterostructures for Schottky Diodes
The metal–semiconductor interface fabricated by conventional methods often suffers from
contamination, degrading transport performance. Herein, we propose a one-pot chemical …
contamination, degrading transport performance. Herein, we propose a one-pot chemical …
Influence of non-inert electrode thickness on the performance of complementary resistive switching in AlOxNy-based RRAM
Y Duan, H Gao, M Qian, Y Sun, S Wu, J Guo… - Applied Physics …, 2022 - pubs.aip.org
This Letter investigates the effect of non-inert electrode thickness on the performance of
complementary resistive switching (CRS). Five devices with different Ta electrode …
complementary resistive switching (CRS). Five devices with different Ta electrode …
Symmetric bipolar resistive switching in copper oxide nanostructure/ITO lateral device under exposure to atmospheric oxygen and application in artificial synaptic …
Capacitively coupled resistive switching behaviour was observed in a planar-geometry two-
terminal device based on nanostructures of copper oxide as active material and indium tin …
terminal device based on nanostructures of copper oxide as active material and indium tin …
Understanding the complementary resistive switching in egg albumen-based single sandwich structure with non-inert Al electrode
X Xiao, J Guo, Z Gao, D Zhai, R Liu, S Qin… - Materials Research …, 2023 - iopscience.iop.org
The concept of complementary resistive switching (CRS) has been proposed as a potential
solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar …
solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar …