In the era of information, characterized by an exponential growth in data volume and an
escalating level of data abstraction, there has been a substantial focus on brain‐like chips …

In the high-tech and intelligent era of the 21st century, as one of the important electronic
devices, wearable electronic products can effectively improve work efficiency and quality of …

A Fe 2 O 3 film homojunction was orderly prepared by magnetron sputtering and a
hydrothermal method. The Fe 2 O 3 homojunction-based memristor exhibits an obvious self …

Ferroelectric memory is one of the most attractive emerging nonvolatile memory.
Conventional methods to increase storage density in ferroelectrics include reducing the …

Resistive memory devices are a promising technology, but they face challenges like sneak
paths in crossbar arrays. Complementary resistive switching (CRS) devices offer a …

Crossbar resistive memory architectures enable high-capacity storage and neuromorphic
computing, accurate retrieval of the stored information is a prerequisite during read …

The metal–semiconductor interface fabricated by conventional methods often suffers from
contamination, degrading transport performance. Herein, we propose a one-pot chemical …

This Letter investigates the effect of non-inert electrode thickness on the performance of
complementary resistive switching (CRS). Five devices with different Ta electrode …

Capacitively coupled resistive switching behaviour was observed in a planar-geometry two-
terminal device based on nanostructures of copper oxide as active material and indium tin …

The concept of complementary resistive switching (CRS) has been proposed as a potential
solution for mitigating the unwanted sneak path current intrinsic to large-scale crossbar …