Thin-film microcrystalline silicon solar cells: 11.9% efficiency and beyond
H Sai, T Matsui, H Kumagai… - Applied Physics …, 2018 - iopscience.iop.org
High-efficiency thin-film hydrogenated microcrystalline silicon solar cells (µc-Si: H) were
developed using a periodically textured substrate at a relatively high growth rate of∼ 1 nm …
developed using a periodically textured substrate at a relatively high growth rate of∼ 1 nm …
An efficient light trapping method to enhance the efficiency of thin film solar cell
T Ahmed, SSA Askari, MK Das - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
An efficient light management technique is proposed and investigated by developing a
TCAD model for microcrystalline silicon based thin film solar cell. The model includes …
TCAD model for microcrystalline silicon based thin film solar cell. The model includes …
A comprehensive investigation of organic active layer structures toward high performance near-infrared phototransistors
Tin phthalocyanine (SnPc) is a kind of organic semiconductor material with excellent
absorbing characteristic in near-infrared (NIR) region but rarely applied in photosensitive …
absorbing characteristic in near-infrared (NIR) region but rarely applied in photosensitive …
Ageing mediated silicon suboxide interlayer growth in porous silicon: p-Si heterostructured metal-semiconductor-metal device for enhanced UV-visible photodetection
Present work reports development of silicon oxide within metal-semiconductor-metal
Schottky contact photodiode from Al: porous silicon (PS): p-Si heterojunction mediated by …
Schottky contact photodiode from Al: porous silicon (PS): p-Si heterojunction mediated by …
Crystallite distribution analysis based on hydrogen content in thin-film nanocrystalline silicon solar cells by atom probe tomography
Abstract The three-dimensional (3D) distribution of nanosized silicon (Si) crystallites within a
hydrogenated nanocrystalline Si (nc-Si: H) material is examined by laser-assisted atom …
hydrogenated nanocrystalline Si (nc-Si: H) material is examined by laser-assisted atom …
[HTML][HTML] 新穎奈米球微影術製備規則有序一維矽單晶奈米結構陣列之研究
RY Gu - 2018 - ir.lib.ncu.edu.tw
摘要(中) 一維矽基奈米結構因其獨特的光學性質及應用潛力使其在先進光電領域中受到很大的
關注. 本研究中, 我們成功提出一種全新的製程, 結合氧氣電漿修飾奈米球微影術及金催化蝕刻 …
關注. 本研究中, 我們成功提出一種全新的製程, 結合氧氣電漿修飾奈米球微影術及金催化蝕刻 …
47‐4: Highly Sensitive Lateral Poly‐Si PIN Photodiode by Blue Laser Annealing of 400 nm Amorphous Si for Near Infrared Light Sensing
J Lee, H Kim, S Kang, J Bae, S Lee… - SID Symposium Digest …, 2023 - Wiley Online Library
We report a novel low‐temperature poly‐Si (LTPS) lateral PIN photodiode fabricated using
blue laser annealing (BLA) of amorphous Si. The diode exhibits the low off current density …
blue laser annealing (BLA) of amorphous Si. The diode exhibits the low off current density …
高性能Si 太陽電池の3 次元アトムプローブ解析水素検出によるSi ヘテロ接合および微結晶粒の可視化へ
清水康雄 - 応用物理, 2021 - jstage.jst.go.jp
抄録 3 次元アトムプローブ (APT) 法は原子レベルに近い空間分解能で, 試料を構成する元素の実
空間分布を得る手法である. ハードウェア・ソフトウェア両面の高度化が進むことで多種多様な材料 …
空間分布を得る手法である. ハードウェア・ソフトウェア両面の高度化が進むことで多種多様な材料 …