Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe
Searching van der Waals ferroic materials that can work under ambient conditions is of
critical importance for developing ferroic devices at the two-dimensional limit. Here we report …
critical importance for developing ferroic devices at the two-dimensional limit. Here we report …
Intrinsic dichroism in amorphous and crystalline solids with helical light
Amorphous solids do not exhibit long-range order due to the disordered arrangement of
atoms. They lack translational and rotational symmetry on a macroscopic scale and are …
atoms. They lack translational and rotational symmetry on a macroscopic scale and are …
In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments
R Ge, B Liu, F Sui, Y Zheng, Y Yu, K Wang, R Qi… - Small, 2024 - Wiley Online Library
Abstract 2D van der Waals (vdW) layered semiconductor vertical heterostructures with
controllable band alignment are highly desired for nanodevice applications including …
controllable band alignment are highly desired for nanodevice applications including …
Exploring the impact of van der Waals-corrected exchange-correlation functional on the physical properties of layered GeSe compound
We have investigated the effects of weak interactions on structural, electronic properties with
mechanical and dynamical stability on naturally layered α-, β-, and γ-phases of GeSe …
mechanical and dynamical stability on naturally layered α-, β-, and γ-phases of GeSe …
Wafer-Scale Freestanding Monocrystalline Chalcogenide Membranes by Strain-Assisted Epitaxy and Spalling
Monocrystalline chalcogenide thin films in freestanding forms are very much needed in
advanced electronics such as flexible phase change memories (PCMs). However, they are …
advanced electronics such as flexible phase change memories (PCMs). However, they are …
Amorphous GeSnSe nanoparticles as a Li-Ion battery anode with High-Capacity and long cycle performance
A new ternary amorphous GeSnSe (GSS) nanopowder was effectively synthesized by using
ball milling under inert atmosphere. Its topographical, microstructural and elemental …
ball milling under inert atmosphere. Its topographical, microstructural and elemental …
Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se
S Wang, T Xing, TR Wei, J Zhang, P Qiu, J Xiao, D Ren… - Materials, 2023 - mdpi.com
Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be
promising thermoelectric (TE) materials due to their decent thermoelectric performance …
promising thermoelectric (TE) materials due to their decent thermoelectric performance …
Intrinsic negative Poisson's ratio of the monolayer semiconductor β-TeO2.
Monolayer semiconductors with unique mechanical responses are promising candidates for
novel electromechanical applications. Here, through first-principles calculations, we …
novel electromechanical applications. Here, through first-principles calculations, we …
Phase transition and metallization of semiconductor GeSe at high pressure
Y Luo, M Wu, Y Wu, K Wang - Journal of Physics: Condensed …, 2024 - iopscience.iop.org
Over the past few decades, semiconductor materials of the group IV–VI monochalcogenides
have attracted considerable interest from researchers due to their rich structural …
have attracted considerable interest from researchers due to their rich structural …
Strain-engineering on GeSe: Raman spectroscopy study
JJ Wang, YF Zhao, JD Zheng, XT Wang… - Physical Chemistry …, 2021 - pubs.rsc.org
Among the IV–VI compounds, GeSe has wide applications in nanoelectronics due to its
unique photoelectric properties and adjustable band gap. Even though modulation of its …
unique photoelectric properties and adjustable band gap. Even though modulation of its …