Electric-field-induced room-temperature antiferroelectric–ferroelectric phase transition in van der Waals layered GeSe

Z Guan, Y Zhao, X Wang, N Zhong, X Deng, Y Zheng… - ACS …, 2022 - ACS Publications
Searching van der Waals ferroic materials that can work under ambient conditions is of
critical importance for developing ferroic devices at the two-dimensional limit. Here we report …

Intrinsic dichroism in amorphous and crystalline solids with helical light

A Jain, JL Bégin, P Corkum, E Karimi, T Brabec… - Nature …, 2024 - nature.com
Amorphous solids do not exhibit long-range order due to the disordered arrangement of
atoms. They lack translational and rotational symmetry on a macroscopic scale and are …

In Situ Formation of SnSe2/SnSe Vertical Heterostructures toward Polarization Selectable Band Alignments

R Ge, B Liu, F Sui, Y Zheng, Y Yu, K Wang, R Qi… - Small, 2024 - Wiley Online Library
Abstract 2D van der Waals (vdW) layered semiconductor vertical heterostructures with
controllable band alignment are highly desired for nanodevice applications including …

Exploring the impact of van der Waals-corrected exchange-correlation functional on the physical properties of layered GeSe compound

A Kutluca, E Deligoz, H Ozisik - Computational Materials Science, 2024 - Elsevier
We have investigated the effects of weak interactions on structural, electronic properties with
mechanical and dynamical stability on naturally layered α-, β-, and γ-phases of GeSe …

Wafer-Scale Freestanding Monocrystalline Chalcogenide Membranes by Strain-Assisted Epitaxy and Spalling

C Yoo, HK Shin, SS Han, S Lee, CW Lee, YJ Song… - Nano Letters, 2024 - ACS Publications
Monocrystalline chalcogenide thin films in freestanding forms are very much needed in
advanced electronics such as flexible phase change memories (PCMs). However, they are …

Amorphous GeSnSe nanoparticles as a Li-Ion battery anode with High-Capacity and long cycle performance

JR Rodriguez, SB Aguirre, Z Qi, H Wang… - Journal of Colloid and …, 2024 - Elsevier
A new ternary amorphous GeSnSe (GSS) nanopowder was effectively synthesized by using
ball milling under inert atmosphere. Its topographical, microstructural and elemental …

Enhancing the Thermoelectric Performance of GeSb4Te7 Compounds via Alloying Se

S Wang, T Xing, TR Wei, J Zhang, P Qiu, J Xiao, D Ren… - Materials, 2023 - mdpi.com
Ge-Sb-Te compounds (GST), the well-known phase-change materials, are considered to be
promising thermoelectric (TE) materials due to their decent thermoelectric performance …

Intrinsic negative Poisson's ratio of the monolayer semiconductor β-TeO2.

Y Yuan, Z Zhu, S Zhao, W Li - … Matter: an Institute of Physics Journal, 2024 - europepmc.org
Monolayer semiconductors with unique mechanical responses are promising candidates for
novel electromechanical applications. Here, through first-principles calculations, we …

Phase transition and metallization of semiconductor GeSe at high pressure

Y Luo, M Wu, Y Wu, K Wang - Journal of Physics: Condensed …, 2024 - iopscience.iop.org
Over the past few decades, semiconductor materials of the group IV–VI monochalcogenides
have attracted considerable interest from researchers due to their rich structural …

Strain-engineering on GeSe: Raman spectroscopy study

JJ Wang, YF Zhao, JD Zheng, XT Wang… - Physical Chemistry …, 2021 - pubs.rsc.org
Among the IV–VI compounds, GeSe has wide applications in nanoelectronics due to its
unique photoelectric properties and adjustable band gap. Even though modulation of its …