As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability
The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …
Reduced dynamic gate pulse stress instability in dual gate a-InGaZnO thin film transistors
The dynamic gate pulse stress effect on the electrical performance of single gate (SG) and
dual gate (DG) thin-film transistors (TFTs) is reported. The stress is implemented with rising …
dual gate (DG) thin-film transistors (TFTs) is reported. The stress is implemented with rising …
A 38μm-Pitch, 3-Output Gate Driver Using Low-Temperature Poly-Si Oxide TFTs for High Resolution Display
We report a 38-pitch gate driver with three outputs using low-temperature poly-Si oxide
(LTPO) thin-film transistors (TFTs) for ultra-high definition (UHD) display. A single stage of …
(LTPO) thin-film transistors (TFTs) for ultra-high definition (UHD) display. A single stage of …
Strong Immunity to Drain-Induced Barrier Lowering in ALD-Grown Preferentially Oriented Indium Gallium Oxide Transistors
Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
A novel gate driver working under depletion mode oxide TFTs using low-temperature poly-Si oxide TFTs
We report a novel gate driver integrated by low-temperature poly-Si oxide (LTPO) thin-film
transistors (TFTs). The proposed gate driver consists of four p-type low-temperature …
transistors (TFTs). The proposed gate driver consists of four p-type low-temperature …
Low Cost, Al2O3 and ZrAlOx Stack Passivation by Spray Pyrolysis for Highly Stable Amorphous InGaZnO Thin‐Film Transistors
A stack passivation by spray pyrolysis is demonstrated for high performance and stable
amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device …
amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs). The device …
Emission gate driver with five low-temperature poly-Si oxide TFTs without capacitor for narrow-bezel AMOLED display
We report a highly simplified emission (EM) gate driver circuit for high resolution and narrow
bezel active-matrix organic light emitting diode (AMOLED) display using low-temperature …
bezel active-matrix organic light emitting diode (AMOLED) display using low-temperature …
Abnormal threshold voltage shift and sub-channel generation in top-gate InGaZnO TFTs under backlight negative bias illumination stress
KJ Zhou, TC Chang, MC Tai, YA Chen… - ACS Applied …, 2023 - ACS Publications
Previous reports on the top-gate IGZO thin-film transistors (TFTs) under negative bias
illumination stress (NBIS) show a threshold voltage (V TH) shift to the left. However, in the …
illumination stress (NBIS) show a threshold voltage (V TH) shift to the left. However, in the …
Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability
InGaZnO (IGZO) based thin film transistors (TFTs) are successfully employed in commercial
displays due to their excellent electrical properties but next‐generation displaybackplanes …
displays due to their excellent electrical properties but next‐generation displaybackplanes …
A compact model of amorphous InGaZnO TFTs to predict temperature-dependent characteristics
In amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), the conduction mechanism of
percolation and trap-limited conduction prevails within the limits of gate voltage. In these …
percolation and trap-limited conduction prevails within the limits of gate voltage. In these …