Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems
Although vertical configurations for high-density storage require challenging process steps,
such as etching high aspect ratios and atomic layer deposition (ALD), they are more …
such as etching high aspect ratios and atomic layer deposition (ALD), they are more …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
Causes and consequences of the stochastic aspect of filamentary RRAM
Filamentary resistive RAM devices are affected by various sources of instability and
variability. Stochastic fluctuations, caused by variability of the RRAM-driving transistor and …
variability. Stochastic fluctuations, caused by variability of the RRAM-driving transistor and …
Application of resistive random access memory in hardware security: A review
G Rajendran, W Banerjee… - Advanced Electronic …, 2021 - Wiley Online Library
Nowadays, advancements in the design of trusted system environments are relying on
security provided by hardware‐based primitives, while replacing resource‐hungry software …
security provided by hardware‐based primitives, while replacing resource‐hungry software …
Quantized conduction device with 6‐bit storage based on electrically controllable break junctions
W Banerjee, H Hwang - Advanced Electronic Materials, 2019 - Wiley Online Library
Atomic‐level control of conductance in a Cu/Ti/HfO2/TiN‐based electrically controllable
break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack …
break junction (ECBJ) is demonstrated. The ECBJ is designed through sophisticated stack …
Ionic liquid crystal thin film as switching layer in nonvolatile resistive memory
W Zhang, H Komatsu, S Maruyama… - … applied materials & …, 2023 - ACS Publications
In this study, we propose the use of an ionic liquid crystal (ILC) as a new resistive switching
layer in nonvolatile resistive random-access memory (ReRAM) devices. The high-quality …
layer in nonvolatile resistive random-access memory (ReRAM) devices. The high-quality …
Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices
The multiple resistive switching of Pt/HfO 2/TiN devices is demonstrated as a result of a
competition between the switching at opposite metal/oxide interfaces. Three switching …
competition between the switching at opposite metal/oxide interfaces. Three switching …