The probabilistic modeling of random variation in FGMOSFET
R Banchuin, R Chaisricharoen - 2016 13th International …, 2016 - ieeexplore.ieee.org
The probabilistic modeling of the random variation in drain current of the Floating-Gate
MOSFET (FGMOSFET) has been performed in this research. Major physical level causes of …
MOSFET (FGMOSFET) has been performed in this research. Major physical level causes of …
Analytical model of random variation in drain current of FGMOSFET
R Banchuin - Active and Passive Electronic Components, 2015 - Wiley Online Library
The analytical model of random variation in drain current of the Floating Gate MOSFET
(FGMOSFET) has been proposed in this research. The model is composed of two parts for …
(FGMOSFET) has been proposed in this research. The model is composed of two parts for …
Analysis of random variation in subthreshold FGMOSFET
R Banchuin - Active and Passive Electronic Components, 2016 - Wiley Online Library
The analysis of random variation in the performance of Floating Gate Metal Oxide
Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor …
Semiconductor Field Effect Transistor (FGMOSFET) which is an often cited semiconductor …
[PDF][PDF] Novel Powerful Comprehensive Analytical Probabilistic Model of Random Variation in Subthreshold MOSFET's Performance
R BANCHUIN - wseas.com
In this research, the novel comprehensive probabilistic analytical model of the subthreshold
MOSFET's performance affected by both random dopant fluctuation and process variation …
MOSFET's performance affected by both random dopant fluctuation and process variation …
[PDF][PDF] Research Article Analytical Model of Random Variation in Drain Current of FGMOSFET
R Banchuin - 2015 - academia.edu
The analytical model of random variation in drain current of the Floating Gate MOSFET
(FGMOSFET) has been proposed in this research. The model is composed of two parts for …
(FGMOSFET) has been proposed in this research. The model is composed of two parts for …