Optical and structural properties of In-rich InxGa1− xAs epitaxial layers on (1 0 0) InP for SWIR detectors
Abstract In-rich In x Ga 1− x As epitaxial layers were grown on InP (1 0 0) substrates by a
metalorganic vapor phase epitaxy (MOVPE) technique. The effect of Indium (In) composition …
metalorganic vapor phase epitaxy (MOVPE) technique. The effect of Indium (In) composition …
Recent advances in linear and nonlinear Raman spectroscopy. Part IV
LA Nafie - Journal of Raman Spectroscopy, 2010 - Wiley Online Library
The purpose of the review is to provide a concise overview of recent advances in the broadly
defined field of Raman spectroscopy as reflected in part by the many articles published each …
defined field of Raman spectroscopy as reflected in part by the many articles published each …
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
In this study we report the V/III ratio effects on growth, structural, optical and doping
characteristics of low growth rate (∼ 1 Å/s) heteroepitaxial Metal Organic Chemical Vapor …
characteristics of low growth rate (∼ 1 Å/s) heteroepitaxial Metal Organic Chemical Vapor …
Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311) A and (311) B InP planes
We study the optical and vibrational properties of InAlAs alloy films on high-index InP (311)
A/B substrate at a wide range of V/III flux ratio (25–125). The crystallinity, vibrational and …
A/B substrate at a wide range of V/III flux ratio (25–125). The crystallinity, vibrational and …
Power-and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures
B Smiri, F Saidi, A Mlayah… - Japanese Journal of …, 2020 - iopscience.iop.org
We report on combined photoluminescence (PL) and micro-Raman microscopy to study the
effect of the V/III flux ratio on InAlAs ternary alloy grown on (311) A InP by metal-organic …
effect of the V/III flux ratio on InAlAs ternary alloy grown on (311) A InP by metal-organic …
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared
spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the …
spectrum from NIR to LWIR bands. The ternary InGaAs has been investigated herein in the …
[HTML][HTML] Effect of V/III ratio on the optical properties of (3 1 1) A and (3 1 1) B oriented InAlAs/InP heterostructures
InAlAs alloy were grown on a InP (3 1 1) substrate with different polarity, by metalorganic
chemical vapor deposition (MOCVD) growth. Photoluminescence (PL) and Photoreflectance …
chemical vapor deposition (MOCVD) growth. Photoluminescence (PL) and Photoreflectance …
Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates
TM Diallo, AB Poungoué Mbeunmi… - Journal of Vacuum …, 2019 - pubs.aip.org
The quality and properties of epitaxial films are strongly determined by the reactor type and
the precursor source phase. Such parameters can impose limitations in terms of background …
the precursor source phase. Such parameters can impose limitations in terms of background …
Effect of substrate polarity on the optical and vibrational properties of (311) A and (311) B oriented InAlAs/InP heterostructures
In this report, we use the photoluminescence (PL) and micro-Raman scattering techniques
to systematically study the optical and vibrational properties of InAlAs/InP heterostructures …
to systematically study the optical and vibrational properties of InAlAs/InP heterostructures …
Influence of Indium Composition on InAlAs QCLs
In this work, we explored the impact of indium composition (x) on the structural and optical
characteristics of In x Al 1-x As layers within the context of quantum cascade laser (QCL) …
characteristics of In x Al 1-x As layers within the context of quantum cascade laser (QCL) …