Survey of photonic and plasmonic interconnect technologies for intra-datacenter and high-performance computing communications
Large scale data centers (DC) and high performance computing (HPC) systems require
more and more computing power at higher energy efficiency. They are already consuming …
more and more computing power at higher energy efficiency. They are already consuming …
[HTML][HTML] Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate
Increasing the modulation speed of semiconductor lasers has attracted much attention from
the viewpoint of both physics and the applications of lasers. Here we propose a membrane …
the viewpoint of both physics and the applications of lasers. Here we propose a membrane …
A Review of IC Drivers for VCSELs in Datacom Applications
S Mowlavi, S Giannakopoulos… - … Transactions on Very …, 2023 - ieeexplore.ieee.org
Vertical-cavity surface-emitting lasers (VCSELs) are an attractive choice for short-range
optical interconnects (OIs) in datacom applications. As the limited bandwidth of VCSEL is the …
optical interconnects (OIs) in datacom applications. As the limited bandwidth of VCSEL is the …
A scalable 32–56 Gb/s 0.56–1.28 pJ/b voltage-mode VCSEL-based optical transmitter in 28-nm CMOS
An optical transmitter (TX) data path is demonstrated in 28-nm CMOS which drives an 850-
nm vertical-cavity surface-emitting laser (VCSEL) up to 56 Gb/s non-return-to-zero (NRZ). A …
nm vertical-cavity surface-emitting laser (VCSEL) up to 56 Gb/s non-return-to-zero (NRZ). A …
Optical transmitter based on a 1.3-μm VCSEL and a SiGe driver circuit for short-reach applications and beyond
A Malacarne, C Neumeyr, W Soenen… - Journal of Lightwave …, 2018 - opg.optica.org
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission
wavelength in the 1.3-μm region for intensity modulation (IM)/direct detection optical …
wavelength in the 1.3-μm region for intensity modulation (IM)/direct detection optical …
Extreme speed power-DAC: Leveraging InP DHBT for ultimate capacity single-carrier optical transmissions
A Konczykowska, JY Dupuy, F Jorge… - Journal of lightwave …, 2017 - ieeexplore.ieee.org
Power-digital-to-analog converters (DAC) circuits for high capacity and high spectral
efficiency optical transmitters are presented in this paper. They are based on a 0.7-μm InP …
efficiency optical transmitters are presented in this paper. They are based on a 0.7-μm InP …
A Gb/s Two-Tap FFE VCSEL Driver in 14-nm FinFET CMOS Suitable for Burst Mode Operation
MM Khafaji, G Belfiore, J Pliva… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
This paper presents a high-swing vertical-cavity surface-emitting laser (VCSEL) driver with
two-tap feed-forward equalizer (FFE) in 14-nm FinFET CMOS technology. The design …
two-tap feed-forward equalizer (FFE) in 14-nm FinFET CMOS technology. The design …
A 35-Gb/s 0.65-pJ/b asymmetric push-pull inverter-based VCSEL driver with series inductive peaking in 65-nm CMOS
This brief presents a single-ended asymmetric push-pull inverter for driving a vertical-cavity
surface-emitting laser (VCSEL). The proposed driver topology features less power …
surface-emitting laser (VCSEL). The proposed driver topology features less power …
Digital non-linear transmitter equalization for PAM-N-based VCSEL links enabling robust data transmission of 100 gbit/s and beyond
This paper demonstrates why VCSEL-based transmitter systems are not able to capitalize
on higher-order PAM modulation formats (such as PAM-4) to push the link data rate towards …
on higher-order PAM modulation formats (such as PAM-4) to push the link data rate towards …
A 1-pJ/bit 80-Gb/s PRBS Generator With a Modified Cherry–Hooper Output Driver
MM Khafaji, R Henker, F Ellinger - IEEE Journal of Solid-State …, 2019 - ieeexplore.ieee.org
An 80-Gb/s 2 15-1 pseudorandom binary sequence (PRBS) generator suitable for testing
binary communication systems is presented. Implemented in a 130-nm SiGe process, the …
binary communication systems is presented. Implemented in a 130-nm SiGe process, the …