Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle …
X Luo, Y Li, H Yang, Y Liang, K He, W Sun, HH Lin… - Crystals, 2018 - mdpi.com
Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si
substrates under different growth temperature and oxygen flow. The effect of different growth …
substrates under different growth temperature and oxygen flow. The effect of different growth …
Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO2/β-Ga2O3 metal–oxide–semiconductor capacitors
In situ current–voltage and capacitance–voltage characteristics were performed on Ni/HfO
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …
Radiation sustenance of HfO2/β-Ga2O3 metal-oxide-semiconductor capacitors: gamma irradiation study
N Manikanthababu, BR Tak, K Prajna… - Semiconductor …, 2020 - iopscience.iop.org
Abstract β-Ga 2 O 3 is an interesting new generation wide bandgap semiconductor for
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
Impact of gamma rays on the structural, optical, and current-voltage characteristics of CuPbI3/p-Si heterojunctions
S Aldawood, WM Bannoob, SM Ali - Materials Chemistry and Physics, 2023 - Elsevier
Copper lead iodide (CuPbI 3) perovskite thin films were spin-coated on p-type silicon (p-Si)
substrates to manufacture CuPbI 3/p-Si heterojunctions. A Co-60 gamma source has been …
substrates to manufacture CuPbI 3/p-Si heterojunctions. A Co-60 gamma source has been …
Grain fragmentation and phase transformations in hafnium oxide induced by swift heavy ion irradiation
We report on the 100 MeV Ag ion irradiation-induced modifications in hafnium oxide films
deposited by radio frequency (RF) magnetron sputtering method. The phase transformations …
deposited by radio frequency (RF) magnetron sputtering method. The phase transformations …
Influence of Hf precursor concentration on various properties of sol-gel based spin coated HfO2 thin films
Rigorous studies on hafnium oxide (HfO 2) thin films are crucial as it is regarded as the ideal
insulating material, for the replacement of silicon dioxide (SiO 2) dielectric material, widely …
insulating material, for the replacement of silicon dioxide (SiO 2) dielectric material, widely …
Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
Ion induced crystallization and grain growth of hafnium oxide nano-particles in thin-films deposited by radio frequency magnetron sputtering
We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of
HfO 2 nanoparticles (NPs) within the HfO 2 thin-films deposited by radio frequency (RF) …
HfO 2 nanoparticles (NPs) within the HfO 2 thin-films deposited by radio frequency (RF) …
Influence of film thickness on the dielectric characteristics of hafnium oxide layers
DA Golosov, N Vilya, SМ Zavadski, SN Melnikov… - Thin Solid Films, 2019 - Elsevier
The present work focuses on the study of properties of hafnium oxide (HfO 2) films,
deposited by reactive magnetron sputtering of the Hf target in Ar/O 2 gas mixture. The X-ray …
deposited by reactive magnetron sputtering of the Hf target in Ar/O 2 gas mixture. The X-ray …