Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si
substrates under different growth temperature and oxygen flow. The effect of different growth …

In situ current–voltage and capacitance–voltage characteristics were performed on Ni/HfO
2/β-Ga 2 O 3 devices using 120 MeV Ag 7+ swift heavy ion (SHI) irradiation. The Poole …

Abstract β-Ga 2 O 3 is an interesting new generation wide bandgap semiconductor for
power device applications. The gamma irradiation was performed on the HfO 2/β-Ga 2 O 3 …

In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …

Copper lead iodide (CuPbI 3) perovskite thin films were spin-coated on p-type silicon (p-Si)
substrates to manufacture CuPbI 3/p-Si heterojunctions. A Co-60 gamma source has been …

We report on the 100 MeV Ag ion irradiation-induced modifications in hafnium oxide films
deposited by radio frequency (RF) magnetron sputtering method. The phase transformations …

Rigorous studies on hafnium oxide (HfO 2) thin films are crucial as it is regarded as the ideal
insulating material, for the replacement of silicon dioxide (SiO 2) dielectric material, widely …

The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …

We report on the swift heavy ion (SHI) irradiation induced crystallization and grain growth of
HfO 2 nanoparticles (NPs) within the HfO 2 thin-films deposited by radio frequency (RF) …

The present work focuses on the study of properties of hafnium oxide (HfO 2) films,
deposited by reactive magnetron sputtering of the Hf target in Ar/O 2 gas mixture. The X-ray …