Limited by the turn-off ability of single power module, parallel connection of insulated-gate
bipolar transistors (IGBTs) is essential to enable breaking ability of current in the order of …

Unbalance of transient currents of multiple chips inside press-pack insulated-gate bipolar
transistor (PP IGBT) results in degrading operation and even device damage. Chip currents …

Turn-off failure under clamped inductive load, is one of the most concerns in insulated gate
bipolar transistor (IGBT) chips. Besides, this turn-off failure can be attributed to two causes …

The problem of current sharing imbalance in the parallel connection of IGBT multi-modules
affects the wide-scale application of parallel IGBT. The current imbalance problem in the …

Press pack insulated-gate bipolar transistor (PP IGBT) plays an essential role in high-
capacity power electronic transmission equipment. Due to the influence of various factors …

压接型绝缘栅双极晶体管(insulated gate bipolar transistor, IGBT) 的多芯片并联关断期间会
出现严重的不均流现象, 直接影响到器件的关断可靠性. 文中重点研究压接型IGBT …

In this article, the increment mechanism of the saturation voltage of multichip press-pack
insulated gate bipolar transistors (IGBTs) during power cycling tests (PCTs) is investigated …

The short-circuit withstand capability (SCWC) of the press-pack insulated gate bipolar
transistor (IGBT) module (PP-IGBT) was investigated, and its evaluation method was …

Within a press-pack insulated gate bipolar transistor (PP IGBT) submodule, the components
are packaged by external clamping force. This external clamping force significantly affects …

Printed Circuit Board (PCB) Rogowski coil array is capable of measuring the currents of the
paralleled chips inside power devices, the operating status and failure behaviour of power …