In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

High‐efficiency electromagnetic (EM) functional materials are the core building block of high‐
performance EM absorbers and devices, and they are indispensable in various fields …

It is indispensable to develop wide-band-gap based ultraviolet (UV) photodetectors (PDs),
which are one of the basic building blocks of solid state UV optoelectronic devices. In the …

We demonstrated an ultrahigh-performance and self-powered β-Ga2O3 thin film solar-blind
photodetector fabricated on a cost-effective Si substrate using a high-temperature seed layer …

A solution to the fabrication of amorphous Ga2O3 solar‐blind photodetectors on rigid and
flexible substrates at room temperature is reported. A robust improvement in the response …

Three possible reasons are proposed as the cause the enhanced responsivities of the
detectors with Ag nanoparticles: i) the depletion width at the metal-semiconductor interface …

Ga_2O_3 photodetectors with interdigitated electrodes have been designed and fabricated,
and the Ga_2O_3 area exposed to illumination acts as the active layer of the photodetector …

We demonstrate a novel type of ZnO self-powered photodetector based on the asymmetric
metal-semiconductor-metal (MSM) structure: one Au interdigitated electrode with wide …

Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great
demand for several technologies, but require the development of novel device structures …

We have demonstrated the fast-speed and high-rejection-ratio solar-blind ultraviolet (UV)
photodetectors based on amorphous Ga 2 O 3 (a-Ga 2 O 3) films grown by atomic layer …