The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …

Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …

Accurate thermal simulation is essential for the near-junction thermal management and
electro-thermal co-design of GaN HEMTs. While various methods have been employed to …

The temperature rise caused by the transistor self-heating effect, and the corresponding
local high temperature hotspot, seriously affects the device's performance and stability, the …

The self-heating effect during the operation of gallium nitride (GaN)-based high electron
mobility transistors (HEMTs) can result in severe heat-dissipation issues, such as local hot …

We present the simultaneous optical and thermal analysis of a freestanding photonic
semiconductor membrane made from wurtzite III-nitride material. By linking …

Anisotropic heat transfer is crucial for advanced thermal management in nanoelectronics,
optoelectronics, thermoelectrics, etc. Traditional approaches modifying thermal conductivity …

Embedded cooling is a promising solution to address thermal challenges of power
electronics. The present work investigates heat spreading effect on the optimal geometries …

Thermal issue has been regarded as one of the bottlenecks for GaN high-electron-mobility
transistor (HEMT) performance and reliability, which highlights the importance of accurate …

At the nanoscale, thermal boundary conductance (TBC) and thermal conductivity are not
intrinsic properties of interfaces or materials but depend on the nearby environment …