Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F Pan, S Gao, C Chen, C Song, F Zeng - Materials Science and …, 2014 - Elsevier
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …

Towards the development of flexible non‐volatile memories

ST Han, Y Zhou, VAL Roy - Advanced Materials, 2013 - Wiley Online Library
Flexible non‐volatile memories have attracted tremendous attentions for data storage for
future electronics application. From device perspective, the advantages of flexible memory …

Resistive random access memory (ReRAM) based on metal oxides

H Akinaga, H Shima - Proceedings of the IEEE, 2010 - ieeexplore.ieee.org
In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

Access devices for 3D crosspoint memory

GW Burr, RS Shenoy, K Virwani… - Journal of Vacuum …, 2014 - pubs.aip.org
The emergence of new nonvolatile memory (NVM) technologies—such as phase change
memory, resistive, and spin-torque-transfer magnetic RAM—has been motivated by exciting …

Complementary resistive switches for passive nanocrossbar memories

E Linn, R Rosezin, C Kügeler, R Waser - Nature materials, 2010 - nature.com
On the road towards higher memory density and computer performance, a significant
improvement in energy efficiency constitutes the dominant goal in future information …

A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view

JY Seok, SJ Song, JH Yoon, KJ Yoon… - Advanced Functional …, 2014 - Wiley Online Library
Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

Organic resistive memory devices: performance enhancement, integration, and advanced architectures

B Cho, S Song, Y Ji, TW Kim… - Advanced Functional …, 2011 - Wiley Online Library
In recent years, organic resistive memory devices in which active organic materials possess
at least two stable resistance states have been extensively investigated for their promising …

Flexible memristive memory array on plastic substrates

S Kim, HY Jeong, SK Kim, SY Choi, KJ Lee - Nano letters, 2011 - ACS Publications
The demand for flexible electronic systems such as wearable computers, E-paper, and
flexible displays has recently increased due to their advantages over present rigid electronic …

Complementary resistive switching in tantalum oxide-based resistive memory devices

Y Yang, P Sheridan, W Lu - Applied Physics Letters, 2012 - pubs.aip.org
Complementary resistive switches (CRS) are considered as a potential solution for the
sneak path problem in large-scale integration of passive crossbar resistive memory arrays. A …

[HTML][HTML] Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

PAN Feng, C Chao, Z Wang, Y Yang, Y Jing… - Progress in Natural …, 2010 - Elsevier
This review presents a summary of current understanding of the resistive switching materials
and devices which have inspired extraordinary interest all over the world. Although various …