A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

Silicon photonics defines a significant advancement in the development of highly integrated
devices on a single semiconductor substrate. As a revolutionizing technology it benefits from …

The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum
dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication …

Si nanoclusters embedded in SiO 2 have been produced by thermal annealing of SiO x films
prepared by plasma enhanced chemical vapor deposition. The structural properties of the …

The correlation between the structural (average size and density) and optoelectronic
properties band gap and photoluminescence (PL) of Si nanocrystals embedded in SiO2 is …

Size controlled silicon nanocrystals (SiNC) in silicon oxynitride matrix were prepared using
plasma enhanced chemical vapor deposition. The as-deposited superlattices (SLs) and the …

The formation and subsequent growth of crystalline silicon nanoclusters (Si-ncs) in
annealed silicon-rich silicon oxides (SRSOs) were studied by glancing angle x-ray …

Semiconductor nanocrystals and related nanostructures have been extensively studied in
the last years due to their interesting optical and optoelectronic properties. These properties …

The electronic states and optical properties of Si quantum dots (QDs) with variable size
prepared by ion implantation in a SiO 2 matrix are studied by x-ray photoemission …

It is shown that co-implantation, with overlapping projected ranges of Si and P or As,
followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals …