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2006/0105557 6,372,598 B2 4/2002 Kang et al. 2007/0202254 6,399.491 B2 6, 2002 Jeon …

A metal interconnect comprising cobalt and method of forming a metal interconnect
comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt …

Methods for depositing a contact metal layer in contact struc tures of a semiconductor device
are provided. In one embodi ment, a method for depositing a contact metal layer for form ing …

An important resource for students, engineers and researchers working in the area of thin
film deposition using physical vapor deposition (eg sputtering) for semiconductor, liquid …

Semiconductor devices having copper interconnects and methods for their fabrication are
provided. In one embodiment, a semiconductor device is fabricated with a copper …

Certain embodiments pertain to local interconnects formed by subtractive patterning of
blanket layer of tungsten or other conductive material. The grain sizes of tungsten or other …

An interconnect structure having reduced electrical resis tance and a method of forming
Such an interconnect structure are provided. The interconnect structure includes a dielectric …

(57) ABSTRACT A color filter is disposed on a substrate. An organic photo diode is disposed
on the color filter. The organic photodiode includes an electrode insulating layer having a …

US8492897B2 - Microstructure modification in copper interconnect structures - Google
Patents US8492897B2 - Microstructure modification in copper interconnect structures …

Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive
etching and liner deposition methods are provided. Methods involve depositing a blanket …