The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …

The thermal stability and structural characteristics for gate stack structure of HfO 2 dielectrics
deposited by atomic-layer deposition (ALD) were investigated. The structural characteristics …

The thermal stability and structural characteristics for gate stack structure of HfO2 dielectrics
grown by DC reactive magnetron sputtering were investigated. The structural characteristics …

High-k gate dielectric HfO2 thin films have been deposited on Si (100) by using plasma
oxidation of sputtered metallic Hf thin films. The optical and electrical properties in relation to …

We grew lead-free BaZr0. 2Ti0. 8O3 (BZT)/Ba0. 7Ca0. 3TiO3 (BCT) epitaxial
heterostructures and studied their structural, dielectric, ferroelectric and energy density …

Results on yttrium oxide and yttrium silicate films elaborated by an innovative metal-organic
chemical vapor deposition process combining plasma assistance and a liquid precursor …

We report composition, thickness and temperature dependent magnetic properties of
amorphous Co 80-y Fe y B 20 (x nm) films with y= 40, 60 and x= 7–200 nm prepared directly …

A series of yttrium oxide films has been fabricated on Si (100) wafers by different substrate
temperatures based on reactive magnetron sputtering technology. And the evolution of …

Aluminum oxide (AlO x) thin films were grown using aluminum acetylacetonate (Al (acac) 3)
as a source solute by mist chemical vapor deposition (mist CVD). The AlO x thin films grown …

Thin films of yttrium oxide, Y2O3, were deposited on Si (100), MgO and SrTiO3 substrates by
ion beam sputtering. The as-deposited samples are under a strong compressive stress …