Ferromagnetism in 2D materials has attracted tremendous interest from the scientific
community thanks to its potential for the design of magnetic materials with unique properties …

Spin‐orbit torque (SOT) opens an efficient and versatile avenue for the electrical
manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency …

Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient
writing method for magnetic memory, which, however, is still premature for practical …

The interfacial Dzyaloshinskii-Moriya interaction (DMI) has long been observed in normal
metal/ferromagnetic multilayers, enabling the formation of chiral domain walls, skyrmions …

It is crucial to realize field-free deterministic current-induced switching in spin-orbit-torque
magnetic random-access memory with perpendicular magnetic anisotropy (PMA). A …

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic
devices. Here, we report on the damping-like SOT in just one monolayer of the conducting …

Spin current and spin torque generation through the spin–orbit interactions in solids, of bulk
or interfacial origin, is at the heart of spintronics research. The realization of spin–orbit …

Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to the spin Hall
effect (SHE) provides a facile means of probing in-plane magnetization to avoid complex …

Self-induced spin-orbit torques (SI-SOTs) in ferromagnetic (FM) layers have been
overlooked when estimating the spin Hall angle (SHA) of adjacent nonmagnetic (NM) layers …

The quantum metric and Berry curvature are two fundamental and distinct factors that
describe the geometry of quantum eigenstates. Although the role of the Berry curvature in …