Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …
research activity driven by its profound physics and enormous potential for application. This …
High-K materials and metal gates for CMOS applications
J Robertson, RM Wallace - Materials Science and Engineering: R: Reports, 2015 - Elsevier
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
High-κ gate dielectrics: Current status and materials properties considerations
GD Wilk, RM Wallace, JM Anthony - Journal of applied physics, 2001 - pubs.aip.org
Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
High dielectric constant oxides
J Robertson - The European Physical Journal-Applied Physics, 2004 - cambridge.org
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
Yttrium oxide nanoparticle synthesis: an overview of methods of preparation and biomedical applications
G Rajakumar, L Mao, T Bao, W Wen, S Wang… - Applied Sciences, 2021 - mdpi.com
Metal oxide nanoparticles demonstrate uniqueness in various technical applications due to
their suitable physiochemical properties. In particular, yttrium oxide (Y2O3) nanoparticle is …
their suitable physiochemical properties. In particular, yttrium oxide (Y2O3) nanoparticle is …
High dielectric constant gate oxides for metal oxide Si transistors
J Robertson - Reports on progress in Physics, 2005 - iopscience.iop.org
The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …
Atomic layer deposition and conversion
GJ Derderian, GS Sandhu - US Patent 7,589,029, 2009 - Google Patents
(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …
Lanthanide oxide/hafnium oxide dielectric layers
KY Ahn, L Forbes - US Patent 7,192,824, 2007 - Google Patents
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1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …
1983 Suntola et al. 4,993,358 A 2f1991 Mahawili 5,055.319 A 10, 1991 Bunshah et al …
Lanthanum hafnium oxide dielectrics
KY Ahn, L Forbes - US Patent 7,235,501, 2007 - Google Patents
US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …
Lanthanide oxide/hafnium oxide dielectric layers
KY Ahn, L Forbes - US Patent 7,312,494, 2007 - Google Patents
Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …