Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

Metal oxide nanoparticles demonstrate uniqueness in various technical applications due to
their suitable physiochemical properties. In particular, yttrium oxide (Y2O3) nanoparticle is …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

(56) References Cited A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting US PATENT DOCUMENTS step is described …

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US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …

Dielectric layers containing a hafnium oxide hafnium oxide layer arranged as one or more
monolayers and a lanthanide oxide layer and a method of fabricating Such a dielectric layer …