Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Materials science challenges to graphene nanoribbon electronics
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
materials in future nanoelectronic devices due to their exceptional electronic, thermal, and …
Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors
Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …
generation field-effect transistors (FETs). However, it remains challenging to integrate …
Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors
Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …
Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices
Two-dimensional semiconductors could be used as a channel material in low-power
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …
transistors, but the deposition of high-quality, ultrathin high-κ dielectrics on such materials …
Emerging 2D metal oxides: from synthesis to device integration
Abstract 2D metal oxides have aroused increasing attention in the field of electronics and
optoelectronics due to their intriguing physical properties. In this review, an overview of …
optoelectronics due to their intriguing physical properties. In this review, an overview of …
Gate dielectrics integration for 2D electronics: challenges, advances, and outlook
Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …
Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for
fundamental nanoscale science and various technological applications. They are a …
fundamental nanoscale science and various technological applications. They are a …
Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
Abstract Two-dimensional (2D) structures composed of atomically thin materials with high
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
carrier mobility have been studied as candidates for future transistors,,–. However, owing to …
General approach for two-dimensional rare-earth oxyhalides with high gate dielectric performance
B Zhang, Y Zhu, Y Zeng, Z Zhao, X Huang… - Journal of the …, 2023 - ACS Publications
Two-dimensional (2D) rare-earth oxyhalides (REOXs) with novel properties offer fascinating
opportunities for fundamental research and applications. The preparation of 2D REOX …
opportunities for fundamental research and applications. The preparation of 2D REOX …