With their working mechanisms based on ion migration, the switching dynamics and
electrical behaviour of memristive devices resemble those of synapses and neurons, making …

The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Orbital occupancy control in correlated oxides allows the realization of new electronic
phases and collective state switching under external stimuli. The resultant structural and …

Since the emergence of memristors (or memristive devices), how to integrate them into
arrays has been widely investigated. After years of research, memristor crossbar arrays have …

The emergence of new nonvolatile memory (NVM) technologies—such as phase change
memory, resistive, and spin-torque-transfer magnetic RAM—has been motivated by exciting …

Electrically driven metal-insulator transition (MIT) in vanadium dioxide (VO 2) is of interest in
emerging memory devices, neural computation, and high-speed electronics. We report on …

The booming development of artificial intelligence (AI) requires faster physical processing
units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged …

Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …

In this study, the dominant role of the top electrode is presented for Nb2O5-based devices to
demonstrate either the resistive switching or threshold characteristics. These Nb2O5-based …