In this brief, typical locations of the interface and oxide traps generated by the hot carrier
degradation (HCD) in FinFETs are studied with experiments and “atomistic” TCAD …

We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …

In this article, the dynamic variability induced by hot carrier degradation (HCD) in FinFETs is
studied with decomposing the variation contributions of multiple types of traps. The …

We report TCAD simulation studies on nanowire (NW), nanosheet (NS) and forksheet (FS)
FET hot-carrier relia-bility. The simulations entail i) solving the Boltzmann transport equation …

Fin-type field-effect transistors (FinFETs) are vulnerable to the random interface trap (RIT)-
induced reliability issue caused by the bias temperature instability and hot carrier injection …

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-
type metal–oxide–semiconductor field-effect transistors is presented. The study was carried …

The correlation between percolation paths and hot-carrier degradation (HCD) in FinFETs is
first presented in this work. Metal grain granularity (MGG) and random dopants (RD) …

In practical electronic setups, most circuits are operating under dynamic condition, thus the
aging models derived under static bias could lead to unexpected deviation from the real …

In this paper, we have monitored the cycle-to-cycle variation (CCV) of ultra-scaled FinFETs
during hot carrier degradation (HCD) and bias temperature instability (BTI) stress. Different …

We identify correlation between the drain currents in pristine n-channel FinFET transistors
and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we …