A transistor comprising a channel region on a material is disclosed. The channel region
comprises a two-dimensional material comprising opposing sidewalls and oriented …

The SnSe 2 (1− x) S 2 x alloy is a van der Waals semiconductor with versatile, tunable
electronic properties and prospects for future applications ranging from electronics to …

Provided are van der Waals (VDW) films comprising one or more transition metal
chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods …

An electronic device having a stacking structure including a plurality of 2D material layers is
provided. The stacking structure includes a first 2D material layer, among the plurality of 2D …

A resonant tunneling device includes a first two-dimensional semiconductor layer including
a first two-dimensional semiconductor material, a first insulating layer on the first two …

US10790356B2 - Semiconductor device including metal-2 dimensional material-semiconductor
contact - Google Patents US10790356B2 - Semiconductor device including metal-2 …

2020-10-08 Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG
ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …

(57) ABSTRACT A semiconductor junction may include a first semiconductor material and a
second material. The first and the second semiconductor materials are extrinsically …

The present disclosure generally relates to compositions comprising substrate-free 2D
tellurene crystals, and the method of making and using the substrate-free 2D tellurene …

US12040360B2 - Semiconductor device including metal-2 dimensional material-semiconductor
contact - Google Patents US12040360B2 - Semiconductor device including metal-2 …