N+ pocket-doped vertical TFET for enhanced sensitivity in biosensing applications: modeling and simulation

WV Devi, B Bhowmick… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article examines the performance of N+ pocket-doped vertical tunnel field-effect
transistor (VTFET)-based label-free biosensors with the help of an analytical model …

Dielectrically modulated III-V compound semiconductor based pocket doped tunnel FET for label free biosensing applications

S Rashid, F Bashir, FA Khanday… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this paper, a novel structure of double gate tunnel FET has been proposed and simulated
for biosensing applications. The device uses III-V compound semiconductors and an n+ …

Asymmetric dual-gate junctionless GNR tunnel FET as a high-performance photosensor with an electrostatically improved photosensitivity: A Quantum simulation …

K Tamersit - IEEE Sensors Journal, 2023 - ieeexplore.ieee.org
In this article, a new asymmetric dual-gate junctionless graphene nanoribbon tunneling field-
effect phototransistor (DG JL-GNRTFEP) has been proposed using a quantum simulation …

Modeling and simulation of optically gated TFET for near infra-red sensing applications and its low frequency noise analysis

VD Wangkheirakpam, B Bhowmick… - IEEE Sensors …, 2020 - ieeexplore.ieee.org
In this paper, optically gated Tunnel Field Effect Transistor (TFET), operating on the principle
of band-to-band tunneling, is designed for sensing closely spaced spectral wavelengths …

Dielectrically modulated hetero‐material double gate tunnel field‐effect transistor for label free biosensing

I Shakeel, S Rashid, FA Khanday… - International Journal of …, 2024 - Wiley Online Library
This work proposes a novel double gate hetero‐material tunnel field effect transistor for label
free biosensing applications. The device consists of III‐V semiconductor gallium arsenide …

Investigation of a dual MOSCAP TFET with improved vertical tunneling and its near-infrared sensing application

VD Wangkheirakpam, B Bhowmick… - Semiconductor …, 2020 - iopscience.iop.org
In this work, a δ-doped dual MOS-capacitor (MOSCAP)(D-MOS) tunnel field effect transistor
is proposed and investigated. The investigation has been carried out by varying the mole …

An extended dual source double-gate TFET-based optical sensor for near-infrared-sensing applications

P Ghosh, S Tripathi, WV Devi - Applied Physics A, 2023 - Springer
In this article, an extended dual source double-gate structure of tunnel FET is proposed to
detect firmly separated spectral lines of near-infrared lights. Comparative analysis of spectral …

Enhanced optical performance of a dual-drain vertical TFET photosensor for near-infrared light detection

CB Shaik, CK Pandey - Micro and Nanostructures, 2025 - Elsevier
This paper details the optical performance of a dual-drain vertical TFET (DDV-TFET) based
photosensor designed for light detection in the near-infrared (NIR) region (0.7–1.0 μm) …

Design and sensitivity analysis of a vertical TFET with dielectric pocket for its use as label free biosensor

D Das, U Chakraborty, P Borah - Engineering Research Express, 2024 - iopscience.iop.org
A comprehensive analysis of a dielectrically modulated vertical tunnel field effect transistor
(VTFET) as a label free biosensor is presented in this article. The proposed structure …

Dielektrisch modulierter Biosensor basierend auf vertikalem Tunnel-Feldeffekt-Transistor

VD Wangkheirakpam, B Bhowmick… - Intelligente Nano-Bio …, 2024 - Springer
Zusammenfassung Dieses Kapitel diskutiert die Anwendung von vertikalen Tunnel-FET
(VTFET) als dielektrisch modulierter, markierungsfreier Biosensor. Es werden verschiedene …