Synaptic emulation via ferroelectric P (VDF-TrFE) reinforced charge trapping/detrapping in Zinc–Tin oxide transistor
CK Shen, R Chaurasiya, KT Chen… - ACS Applied Materials & …, 2022 - ACS Publications
Brain inspired artificial synapses are highly desirable for neuromorphic computing and are
an alternative to a conventional computing system. Here, we report a simple and cost …
an alternative to a conventional computing system. Here, we report a simple and cost …
Hydrogen Bistability as the Origin of Photo‐Bias‐Thermal Instabilities in Amorphous Oxide Semiconductors
Zinc‐based metal oxide semiconductors have attracted attention as an alternative to current
silicon‐based semiconductors for applications in transparent and flexible electronics …
silicon‐based semiconductors for applications in transparent and flexible electronics …
Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
Y Seung Rim, W Jeong, B Du Ahn… - Applied Physics Letters, 2013 - pubs.aip.org
We investigated the effects of high-pressure water vapor annealing (WHPA) under negative
bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film …
bias temperature illumination stress and light incidence on amorphous InGaZnO thin-film …
Photo stability of solution-processed low-voltage high mobility zinc-tin-oxide/ZrO2 thin-film transistors for transparent display applications
TJ Ha, A Dodabalapur - Applied Physics Letters, 2013 - pubs.aip.org
We report solution-processed low-voltage zinc-tin-oxide (ZTO)/zirconium-oxide thin-film
transistors (TFTs) possessing a field-effect mobility of∼ 10 cm 2/Vs, a threshold voltage of …
transistors (TFTs) possessing a field-effect mobility of∼ 10 cm 2/Vs, a threshold voltage of …
Mobility enhancement in RF-sputtered MgZnO/ZnO heterostructure thin-film transistors
BS Wang, YS Li, IC Cheng - IEEE Transactions on Electron …, 2016 - ieeexplore.ieee.org
Coplanar top-gate MgZnO/ZnO heterostructure thin-film transistors (TFTs) are fabricated on
glass substrates using a large-area processing compatible RF-sputtering technique. The …
glass substrates using a large-area processing compatible RF-sputtering technique. The …
Indium gallium oxide thin film transistor for two-stage UV sensor application
In this work, indium gallium oxide (IGO) thin film transistor (TFT) was fabricated by radio-
frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the …
frequency (RF) sputtering. The transmittance of the TFT shows larger than 80% cross the …
A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization
CY Jeong, D Lee, SH Song, JI Kim… - Semiconductor …, 2014 - iopscience.iop.org
We discuss the device degradation mechanism of amorphous indium–gallium–zinc oxide (a-
IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses based on …
IGZO) thin-film transistors (TFTs) under simultaneous gate and drain bias stresses based on …
Influence of channel layer thickness on the instability of amorphous SiZnSnO thin film transistors under negative bias temperature stress
BH Lee, SY Lee - physica status solidi (a), 2018 - Wiley Online Library
In this study, amorphous silicon‐zinc‐tin‐oxide thin film transistors (a‐SZTO TFTs) are
fabricated by radio‐frequency magnetron sputtering at room temperature, and the influence …
fabricated by radio‐frequency magnetron sputtering at room temperature, and the influence …
Positive Gate-Bias Temperature Stability of RF-Sputtered Active-Layer Thin-Film Transistors
YS Tsai, JZ Chen - IEEE transactions on electron devices, 2011 - ieeexplore.ieee.org
This paper investigates the positive gate-bias temperature stability of RF-sputtered bottom-
gate Mg 0.05 Zn 0.95 O active-layer thin-film transistors (TFTs) annealed at 200° C for 5 h …
gate Mg 0.05 Zn 0.95 O active-layer thin-film transistors (TFTs) annealed at 200° C for 5 h …
Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O3 radiation and low temperature annealing
HJ Jeong, HM Lee, KT Oh, J Park, JS Park - Journal of Electroceramics, 2016 - Springer
High performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO)
semiconductor were fabricated. In order to activate the electrical properties of the oxide …
semiconductor were fabricated. In order to activate the electrical properties of the oxide …