Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …

We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …

Vertical geometry Ni/Au-β-Ga 2 O 3 Schottky rectifiers were fabricated on Hydride Vapor
Phase Epitaxy layers on conducting bulk substrates, and the rectifying forward and reverse …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Diamond is a promising material for future high power devices due to high breakdown field,
low dielectric constant and high carrier mobility, respectively. From one-dimensional device …

High forward current density of 10 3 A/cm 2 (at 6 V) and a breakdown field larger than 7.7
MV/cm for diamond diodes with a pseudo-vertical architecture, are demonstrated. The power …

Vertical geometry β-Ga 2 O 3 Schottky barrier diodes (SBDs) were fabricated and the
rectifying forward and reverse current-voltage characteristics were demonstrated at elevated …

In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3-based
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …