AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …

Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …

AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …

Aluminum-rich AlGaN is the ideal material system for emerging solid-state deep-ultraviolet
(DUV) light sources. Devices operating in the near-UV spectral range have been realized; to …

The world‐wide spreading of coronavirus disease (COVID‐19) has greatly shaken human
society, thus effective and fast‐speed methods of non‐daily‐life‐disturbance sterilization …

The performance characteristics of optically pumped laser heterostructures emitting in the
UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures …