Progress, challenges, and opportunities for HgCdTe infrared materials and detectors

W Lei, J Antoszewski, L Faraone - Applied Physics Reviews, 2015 - pubs.aip.org
This article presents a review on the current status, challenges, and potential future
development opportunities for HgCdTe infrared materials and detector technology. A brief …

Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication

X Wang, M Wang, Y Liao, H Zhang, B Zhang… - Science China Physics …, 2023 - Springer
Infrared (IR) detectors have important applications in numerous civil and military sectors.
HgCdTe is one of the most important materials for IR detector manufacture. This review …

A novel approach of chemical mechanical polishing using environment-friendly slurry for mercury cadmium telluride semiconductors

Z Zhang, B Wang, P Zhou, D Guo, R Kang, B Zhang - Scientific Reports, 2016 - nature.com
A novel approach of chemical mechanical polishing (CMP) is developed for mercury
cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used …

Defect engineering in MBE-grown CdTe buffer layers on GaAs (211) B substrates

WW Pan, RJ Gu, ZK Zhang, W Lei… - Journal of Electronic …, 2022 - Springer
Demand for high-performance HgCdTe infrared detectors with larger array size and lower
cost has fuelled the heteroepitaxial growth of HgCdTe on CdTe buffer layers on lattice …

Auger-suppression in barrier-blocking HgCdTe long-wavelength infrared detector

J He, L Xu, W Tang, S Zhang - Infrared Physics & Technology, 2023 - Elsevier
Throughout, both the Auger-suppression effect and barrier-blocking devices have been
regarded as highly promising solutions for achieving high-operation-temperature (HOT) in …

Influencing sources for dark current transport and avalanche mechanisms in planar and mesa HgCdTe pin electron-avalanche photodiodes

Q Li, J He, W Hu, L Chen, X Chen… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, both planar and mesa homojunction pin HgCdTe electron-avalanche
photodiodes (e-APDs) are fabricated and investigated-to better understand the dark current …

Large area van der Waals epitaxy of II–VI CdSe thin films for flexible optoelectronics and full-color imaging

W Pan, J Liu, Z Zhang, R Gu, A Suvorova, S Gain… - Nano Research, 2022 - Springer
The demand for future semiconductor devices with enhanced performance and lower cost
has driven the development of epitaxial growth of high quality, free-standing semiconductor …

Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

P Zhang, ZH Ye, CH Sun, YY Chen, TN Zhang… - Journal of Electronic …, 2016 - Springer
The passivation effect of atomic layer deposition of (ALD) Al 2 O 3 film on a HgCdTe infrared
detector was investigated in this work. The passivation effect of Al 2 O 3 film was evaluated …

Enhanced performance of HgCdTe long-wavelength infrared photodetectors with nBn design

J He, P Wang, Q Li, F Wang, Y Gu… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The performance of the long-wavelength infrared (LWIR) HgCdTe photodetectors with nBn
structure is susceptible to the thickness of barrier layer and the huge mismatch of the energy …

[HTML][HTML] Determination of elasto-plastic properties of semiconducting Hg1-xCdxSe using nanoindentation

Z Zhang, W Pan, M Martyniuk, S Ma, L Faraone… - Infrared Physics & …, 2024 - Elsevier
The nanoindentation technique has been applied to study the elasto-plastic properties and
characteristics of Hg 1-x Cd x Se grown on GaSb (2 1 1) B substrates with molecular beam …