Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

M Wu, Y Xiao, Y Zeng, Y Zhou, X Zeng, L Zhang… - InfoMat, 2021 - Wiley Online Library
Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D)
transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to …

2D WS2: From Vapor Phase Synthesis to Device Applications

C Lan, C Li, JC Ho, Y Liu - Advanced Electronic Materials, 2021 - Wiley Online Library
The discovery of graphene has triggered the research on 2D layer structured materials.
Among many 2D materials, semiconducting transition metal dichalcogenides (TMDs) are …

Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors

Y Wang, JC Kim, RJ Wu, J Martinez, X Song, J Yang… - Nature, 2019 - nature.com
As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Sublimation-based wafer-scale monolayer WS 2 formation via self-limited thinning of few-layer WS 2

M Chen, J Chai, J Wu, H Zheng, WY Wu… - Nanoscale …, 2024 - pubs.rsc.org
Atomically-thin monolayer WS2 is a promising channel material for next-generation Moore's
nanoelectronics owing to its high theoretical room temperature electron mobility and …

High performance complementary WS 2 devices with hybrid Gr/Ni contacts

MF Khan, F Ahmed, S Rehman, I Akhtar, MA Rehman… - Nanoscale, 2020 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for
future solid-state device applications due to their unique properties. However, it is …

Visualizing correlation between carrier mobility and defect density in mos2 fet

FXR Chen, N Kawakami, CT Lee, PY Shih… - Applied Physics …, 2022 - pubs.aip.org
Transition metal dichalcogenides (TMDs) with only a few atoms thickness provide an
excellent solution to scale down current semiconductor devices. Many studies have …

Contacting and gating 2-D nanomaterials

Z Cheng, K Price, AD Franklin - IEEE Transactions on Electron …, 2018 - ieeexplore.ieee.org
Two-dimensional (2-D) nanomaterials provide opportunities for a wide range of applications.
In order to harness their usefulness, understanding and controlling the interface between 2 …

Insertion of an ultrathin Al 2 O 3 interfacial layer for Schottky barrier height reduction in WS 2 field-effect transistors

S Zheng, H Lu, H Liu, D Liu, J Robertson - Nanoscale, 2019 - pubs.rsc.org
We report an effective approach for reducing the Schottky barrier height (SBH) in the source
and drain (S/D) contacts of WS2 field-effect transistors (FETs) using an ultrathin Al2O3 …

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

NB Guros, ST Le, S Zhang, BA Sperling… - … applied materials & …, 2019 - ACS Publications
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining
large-area flakes of two-dimensional (2D) materials to fabricate prototypical nanoelectronics …

Structural, optical, magnetic and electrochemical properties of hydrothermally synthesized WS2 nanoflakes

A Joseph, KK Tadi, KS Anju, PM Aneesh - Journal of Materials Research, 2021 - Springer
Transition metal dichalcogenides (TMDCs) have emerged as highly intriguing materials due
to their unique tunable band gap properties with layer number, finding applications in …