[HTML][HTML] Surface roughness impact on the performance of the 3D metal printed waveguide coupler at millimeterwave band
This paper presents the impact of surface roughness on the performance of a three–
dimensional (3D) metal printed waveguide coupler designed at 28 GHz. The surface …
dimensional (3D) metal printed waveguide coupler designed at 28 GHz. The surface …
[HTML][HTML] The Seven-State RF MEMS Miniaturized Broadband Reconfigurable Step Attenuator
Y Si, S Chen, P Fu, J Yu, B Ma, Q Wu, M Li - Micromachines, 2024 - mdpi.com
This paper presents a three-channel reconfigurable step attenuator based on radio
frequency (RF) microelectromechanical system (MEMS) switches, in response to the current …
frequency (RF) microelectromechanical system (MEMS) switches, in response to the current …
A novel X‐band CMOS asymmetric T/R switch with high‐pass TX arm and low‐pass RX arm
JS Fu - Electronics Letters, 2023 - Wiley Online Library
In this work, a novel asymmetric T/R switch is proposed. The operating principle and design
equations of the proposed T/R switch topology are presented. Based on the proposed circuit …
equations of the proposed T/R switch topology are presented. Based on the proposed circuit …
A compact low insertion loss Ka‐band GaAs MMIC traveling wave switch with absorptive characteristic
Y Jiang, W Tang, H Zhang, L Feng… - Microwave and Optical …, 2021 - Wiley Online Library
In this articel, a compact single‐pole double‐throw traveling wave switch is proposed and
fabricated using 0.15 μm‐pHEMT GaAs technology. The switch obtained an insertion loss …
fabricated using 0.15 μm‐pHEMT GaAs technology. The switch obtained an insertion loss …
A novel Q‐band asymmetric T/R switch in GaAs pHEMT using second‐order band‐stop filter for wideband RX‐mode isolation
JS Fu - Electronics Letters, 2023 - Wiley Online Library
To improve the RX‐mode isolation of asymmetric T/R switches, a new circuit topology is
proposed. The proposed asymmetric T/R switch topology features a second‐order band …
proposed. The proposed asymmetric T/R switch topology features a second‐order band …
An Ultra-Wideband, High Power and High Isolation Single-Pole-Double-Throw Switch Using Capacitive Loading Approach
CM Tsao, HT Hsu - IEEE Transactions on Circuits and Systems …, 2023 - ieeexplore.ieee.org
This brief presents an ultra-wideband, series-shunt type single-pole-double-throw (SPDT)
switch with high isolation and good power handling capability from DC to 40 GHz. A new …
switch with high isolation and good power handling capability from DC to 40 GHz. A new …
A 5G mmW bidirectional integrated transmitter in a hybrid and digital beamforming system
L Paquien - 2024 - theses.hal.science
The increasing demand for data rate for mobile telecommunications has led to the use of
beamforming systems in order to notably limit the impact of free space propagation losses …
beamforming systems in order to notably limit the impact of free space propagation losses …
Design of Millimeter-Wave Asymmetric Single-Pole Double-Throw Switch in a 45nm SOI CMOS Technology
Y Fu, Z Zhang, C Huang… - 2023 8th International …, 2023 - ieeexplore.ieee.org
An asymmetric single-pole double-throw (SPDT) switch in a 45-nm silicon-on-insulator (SOI)
CMOS process is presented for 5G millimeter-wave (mm-wave) applications. The LC …
CMOS process is presented for 5G millimeter-wave (mm-wave) applications. The LC …
毫米波非對稱式高功率收發開關與24 GHz 可重構式單刀四擲開關研究
CC Chen - 臺灣大學電信工程學研究所學位論文, 2022 - airitilibrary.com
This thesis is divided into three parts, which are the millimeter-wave high power and
wideband T/R switch used in the fifth-generation (5G) and the configurable single-pole …
wideband T/R switch used in the fifth-generation (5G) and the configurable single-pole …
A Compact Ka-band Asymmetric SPDT Switch in 0.15-μm GaN-on-SiC Technology for 5G Applications
This paper presents a novel compact Ka-band asymmetric single-pole double-throw (SPDT)
transmit/receive (TRx) switch for 5G applications in a 0.15-μm GaN-on-SiC process. The …
transmit/receive (TRx) switch for 5G applications in a 0.15-μm GaN-on-SiC process. The …